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1.SELECTIVE EPITAXY OF SI-CONTAINING MATERIALS AND SUBSTITUTIONALLY DOPED CRYSTALLINE SI-CONTAINING MATERIALS 审中-公开
Title translation: 选择性外延含Si材料和替代掺杂含Si的晶体材料公开(公告)号:EP2588650A4
公开(公告)日:2014-03-19
申请号:EP11801264
申请日:2011-06-23
Applicant: MATHESON TRI GAS INC , IBM
Inventor: FRANCIS TERRY ARTHUR , HASAKA SATOSHI , BRABANT PAUL DAVID , TORRES ROBERT JR , HE HONG , REZNICEK ALEXANDER , ADAM THOMAS N , SADANA DEVENDRA K
CPC classification number: H01L21/02532 , C23C16/30 , C23C16/325 , C30B25/02 , C30B29/06 , H01L21/0237 , H01L21/02529 , H01L21/02573 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636
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2.MOBILITY ENHANCEMENT IN SiGe HETEROJUNCTION BIPOLAR TRANSISTORS 审中-公开
Title translation: 双极SiGe异质结晶体管的迁移增益公开(公告)号:EP1917682A4
公开(公告)日:2009-09-30
申请号:EP06813862
申请日:2006-08-25
Applicant: IBM
Inventor: CHIDAMBARRAO DURESETI , ADAM THOMAS N
IPC: H01L29/737 , H01L29/161 , H01L29/165
CPC classification number: H01L29/7378 , H01L29/161 , H01L29/165
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