公开(公告)号：EP1917678A4

公开(公告)日：2012-08-22

申请号：EP06759161

申请日：2006-05-04

Applicant: IBM

Inventor： KANAKASABAPATHY SIVANANDA K ,  GAIDIS MICHAEL C

IPC: H01L21/00 ,  H01L21/26 ,  H01L21/302 ,  H01L29/78

CPC classification number: H01L43/12 ,  H01L21/76897 ,  H01L27/222 ,  H01L43/08 ,  H01L2924/3011

公开(公告)号：EP1908094A4

公开(公告)日：2009-02-11

申请号：EP05853232

申请日：2005-12-07

Applicant: IBM

Inventor： GAIDIS MICHAEL C ,  KANAKASABAPATHY SIVANANDA K ,  O'SULLIVAN EUGENE J

IPC: H01L21/00 ,  B05C1/00 ,  B44C1/22

CPC classification number: H01L43/12 ,  H01L21/0332 ,  H01L21/0337 ,  H01L27/11507 ,  H01L28/65

Abstract: Techniques for magnetic device (302) fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure (315), comprising thin hard mask layer (316) and thick hard mask layer (318) is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one~ or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.

公开(公告)号：EP2255361A4

公开(公告)日：2014-06-18

申请号：EP09722811

申请日：2009-02-26

Applicant: IBM

Inventor： ASSEFA SOLOMON ,  KANAKASABAPATHY SIVANANDA K ,  NOWAK JANUSZ JOZEF ,  TROUILLOUD PHILIP L

IPC: G11C11/16 ,  H01L23/552 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L27/228 ,  G11C11/1659 ,  H01L43/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Techniques for shielding magnetic memory cells from magnetic fields are presented. In accordance with aspects of the invention, a magnetic storage element is formed with at least one conductive segment electrically coupled to the magnetic storage element. At least a portion of the conductive segment is surrounded with a magnetic liner. The magnetic liner is operative to divert at least a portion of a magnetic field created by a current passing through the conductive segment away from the magnetic storage element.