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1.发明公开METHOD OF FORMING STRAINED SILICON MATERIALS WITH IMPROVED THERMAL CONDUCTIVITY 审中-公开方法来与改进的热传导劲性，教育的硅材料
公开(公告)号：EP1790003A4
公开(公告)日：2011-01-12
申请号：EP05784302
申请日：2005-08-04
Applicant: IBM
Inventor： BEDELL STEPHEN W , CHEN HUAJIE , FOGEL KEITH , MITCHELL RYAN M , SADANA DEVENDRA K
IPC: H01L21/36 , H01L21/02 , H01L21/20 , H01L31/117
CPC classification number: H01L29/1054 , H01L21/02381 , H01L21/0245 , H01L21/02507 , H01L21/02532
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