-
1.发明公开METHOD OF FORMING THIN SGOI WAFERS WITH HIGH RELAXATION AND LOW STACKING FAULT DEFECT DENSITY 有权用于生产薄SGOI晶圆，高，低松弛堆栈错误缺陷密度
公开(公告)号：EP1709671A4
公开(公告)日：2010-06-16
申请号：EP04703076
申请日：2004-01-16
Applicant: IBM
Inventor： CHEN HUAJIE , BEDELL STEPHEN W , SADANA DEVENDRA K , MOCUTA DAN M
IPC: H01L21/331 , H01L21/20 , H01L21/205 , H01L21/316 , H01L21/762 , H01L21/84 , H01L29/10 , H01L29/786
CPC classification number: H01L21/76256 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02664 , H01L21/31658 , H01L21/84 , H01L29/1054 , H01L29/78687
Search Results
1
records
(took 0.005 seconds)
筛选
AND
AND
过滤
NOT
NOT
Scan to Join
