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1.FORMATION OF IMPROVED SOI SUBSTRATES USING BULK SEMICONDUCTOR WAFERS 有权
Title translation: 改进的SOI衬底的形成使用批量半导体晶圆公开(公告)号:EP2024995A4
公开(公告)日:2013-07-03
申请号:EP07797764
申请日:2007-05-25
Applicant: IBM
Inventor: CHIDAMBARRAO DURESETI , HENSON WILLIAM K , NG HUNG Y , RIM KERN , WANN CLEMENT H
IPC: H01L21/76 , H01L21/762 , H01L21/764
CPC classification number: H01L21/764 , H01L21/76283