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1.发明公开METHOD AND APPARATUS FOR FORMING NICKEL SILICIDE WITH LOW DEFECT DENSITY IN FET DEVICES 有权方法和设备用于形成硅化镍低缺陷密度FET地层
公开(公告)号：EP1946361A4
公开(公告)日：2011-03-09
申请号：EP06773615
申请日：2006-06-20
Applicant: IBM
Inventor： WONG KEITH KWONG HON , PURTELL ROBERT JOSEPH
IPC: H01L21/4763 , C23C14/34 , H01L21/285
CPC classification number: H01L21/28518 , C23C14/16 , C23C14/32 , C23C14/345 , H01L21/28052 , H01L21/2855 , H01L29/66507 , H01L29/78
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