MIM CAPACITOR STRUCTURES AND FABRICATION METHODS IN DUAL-DAMASCENE STRUCTURES
    1.
    发明公开
    MIM CAPACITOR STRUCTURES AND FABRICATION METHODS IN DUAL-DAMASCENE STRUCTURES 有权
    MIM电容器结构和方法,双镶嵌结构

    公开(公告)号:EP1547133A4

    公开(公告)日:2008-11-26

    申请号:EP03754842

    申请日:2003-09-23

    Abstract: A metal-insulator-metal (MIM) capacitor (242/252) structure and method of forming the same. A dielectric layer (214) of a semiconductor device (200) is patterned with a dual damascene pattern having a first pattern (216) and a second pattern (218). The second pattern (218) has a greater depth than the first pattern (216). A conductive layer (226) is formed over the dielectric layer (214) in the first pattern, and a conductive layer is formed over the conductive layer in the first pattern (216). A dielectric layer (232), conductive layer (234), dielectric layer (236) and conductive layer (238) are disposed over the conductive layer (226) of the second pattern (218). Conductive layer (234), dielectric layer (232) and conductive layer (226) form a first MIM capacitor (252). Conductive layer (238), dielectric layer (236) and conductive layer (234) form a second MIM capacitor (242) parallel to the first MIM capacitor (242).

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