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1.发明公开ULTRA-THIN HF-DOPED SILICON OXYNITRIDE FILM FOR HIGH PERFORMANCE CMOS APPLICATIONS AND METHOD OF MANUFACTURE 审中-公开ULTRA THIN RF硅氮氧化物掺杂的高性能CMOS应用和方法
公开(公告)号：EP1872409A4
公开(公告)日：2009-12-30
申请号：EP06750619
申请日：2006-04-19
Applicant: IBM
Inventor： ZHU WENJUAN , CHUDZIK MICHAEL P , GLUSCHENKOV OLEG , PARK DAE-GYU , SEKIGUCHI AKIHISA
IPC: H01L29/78 , H01L21/28 , H01L21/336 , H01L29/51
CPC classification number: H01L21/28185 , H01L21/28097 , H01L21/28229 , H01L21/823857 , H01L29/4966 , H01L29/4975 , H01L29/517
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