公开(公告)号：EP2145349A4

公开(公告)日：2012-03-28

申请号：EP08754077

申请日：2008-04-08

Applicant: IBM

Inventor： CHUDZIK MICHAEL P ,  DORIS BRUCE B ,  HENSON WILLIAM K ,  YAN HONGWEN ,  ZHANG YING

IPC: H01L21/20 ,  H01L21/28 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8238 ,  H01L21/84 ,  H01L29/04

CPC classification number: H01L29/045 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/31138 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/84

公开(公告)号：EP2404316A4

公开(公告)日：2016-04-06

申请号：EP10770142

申请日：2010-04-22

Applicant: IBM

Inventor： GREENE BRIAN J ,  CHUDZIK MICHAEL P ,  HAN SHU-JEN ,  HENSON WILLIAM K ,  LIANG YUE ,  MACIEJEWSKI EDWARD P ,  NA MYUNG-HEE ,  NOWAK EDWARD J ,  YU XIAOJUN

IPC: H01L21/8234 ,  H01L21/28 ,  H01L21/84 ,  H01L27/12

CPC classification number: H01L21/823462 ,  H01L21/28229 ,  H01L21/84 ,  H01L27/1203

公开(公告)号：EP1974372A4

公开(公告)日：2009-12-09

申请号：EP07716303

申请日：2007-01-03

Applicant: IBM

Inventor： CHUDZIK MICHAEL P ,  DORIS BRUCE B ,  GUHA SUPRATIK ,  JAMMY RAJARAO ,  NARAYANAN VIJAY ,  PARUCHURI VAMSI K ,  WANG YUN Y ,  KWONG HON WONG KEITH

IPC: H01L21/336 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/517 ,  H01L21/28088 ,  H01L21/823828 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2419925A4

公开(公告)日：2016-03-30

申请号：EP10765059

申请日：2010-04-14

Applicant: IBM

Inventor： CHUDZIK MICHAEL P ,  HENSON WILLIAM K ,  JHA RASHMI ,  LIANG YUE ,  RAMACHANDRAN RAVIKUMAR ,  WISE RICHARD S

IPC: H01L21/8238 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L29/517 ,  H01L21/28185 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/49 ,  H01L29/7833

Abstract: The present invention, in one embodiment, provides a method of forming a semiconductor device that includes providing a substrate including a first conductivity type region and a second conductivity type region; forming a gate stack including a gate dielectric atop the first conductivity type region and the second conductivity type region of the substrate and a first metal gate conductor overlying the high-k gate dielectric; removing a portion of the first metal gate conductor that is present in the first conductivity type region to expose the gate dielectric present in the first conductivity type region; applying a nitrogen based plasma to the substrate, wherein the nitrogen based plasma nitrides the gate dielectric that is present in the first conductivity type region and nitrides the first metal gate conductor that is present in the second conductivity type region; and forming a second metal gate conductor overlying at least the gate dielectric that is present in the first conductivity type region.

公开(公告)号：EP2415073A4

公开(公告)日：2013-09-11

申请号：EP10759255

申请日：2010-03-29

Applicant: IBM

Inventor： BU HUIMING ,  CHUDZIK MICHAEL P ,  HE WEI ,  JHA RASHMI ,  KIM YOUNG-HEE ,  KRISHNAN SIDDARTH A ,  MO RENEE T ,  MOUMEN NAIM ,  NATZLE WESLEY C

IPC: H01L29/51 ,  H01L21/28 ,  H01L21/336 ,  H01L29/49

CPC classification number: H01L21/28202 ,  H01L21/28176 ,  H01L21/28185 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1872409A4

公开(公告)日：2009-12-30

申请号：EP06750619

申请日：2006-04-19

Applicant: IBM

Inventor： ZHU WENJUAN ,  CHUDZIK MICHAEL P ,  GLUSCHENKOV OLEG ,  PARK DAE-GYU ,  SEKIGUCHI AKIHISA

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/336 ,  H01L29/51

CPC classification number: H01L21/28185 ,  H01L21/28097 ,  H01L21/28229 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/517