HIGH POWER SEMICONDUCTOR LASER DIODES
    1.
    发明授权
    HIGH POWER SEMICONDUCTOR LASER DIODES 有权
    高功率半导体激光二极管

    公开(公告)号:EP2191546B1

    公开(公告)日:2018-01-17

    申请号:EP08807113.9

    申请日:2008-09-18

    摘要: A high power laser source comprises a bar of laser diodes, a submount onto which said laser bar is affixed, and a cooler onto which said submount is affixed. The laser bar has a first coefficient of thermal expansion (CTEbar), the submount has a second coefficient of thermal expansion (CTEsub), and the cooler has a third coefficient of thermal expansion (CTEcool) the third coefficient (CTEcool) being higher than both said first coefficient (CTEbar) and said second coefficient (CTEsub). Contrary to the usual approach with a CTEsub matching the CTEbar, the second coefficient (CTEsub) is selected lower than both said first coefficient (CTEbar) and said third coefficient (CTEcool) according to the invention. A preferred range is CTEsub=k*CTEbar, with 0.4