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公开(公告)号：EP2529452B1
公开(公告)日：2018-05-23
申请号：EP11735195.7
申请日：2011-01-20
CPC分类号： H01S5/02284 , G02B6/262 , G02B6/32 , H01S5/005 , H01S5/4012
摘要： Optical systems and components thereof are disclosed which may be used for efficiently coupling laser energy into an optical conduit while maintaining a homogenous beam output from the optical conduit. Some embodiments are directed more specifically to far field beam homogenization of optical fiber coupled radiation.
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2.发明授权A SEMICONDUCTOR LASER DEVICE AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR LASER DEVICE 有权HERBLEITERLASERVORRICHTUNG VERFAHREN ZUR HERSTELLUNG EINER HALBLEITERLASERVORRICHTUNG
公开(公告)号：EP2748903B1
公开(公告)日：2017-03-22
申请号：EP12750802.6
申请日：2012-08-20
发明人： TRAUT, Silke , SAINTENOY, Stéphanie
CPC分类号： H01S5/0282 , H01S5/0283 , H01S5/18313 , H01S5/18352 , H01S5/18369 , H01S2301/176
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公开(公告)号：EP2522057B1
公开(公告)日：2017-03-22
申请号：EP10760760.8
申请日：2010-08-19
CPC分类号： H01S5/147 , G02B6/262 , G02B6/30 , G02B6/4203 , H01S5/028 , H01S5/065 , H01S5/101 , H01S5/1085 , H01S2301/02
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公开(公告)号：EP2208265B1
公开(公告)日：2017-02-22
申请号：EP08840144.3
申请日：2008-10-15
IPC分类号： H01S5/14 , H01S5/065 , H01S3/067 , H01S3/0941
CPC分类号： H01S5/146 , H01S3/06754 , H01S3/094003 , H01S3/094076 , H01S3/09415 , H01S3/1305 , H01S5/0287 , H01S5/06216 , H01S5/0657 , H01S5/06835 , H01S5/1021 , H01S5/141 , H01S2301/03 , H01S2301/06
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公开(公告)号：EP2450767B1
公开(公告)日：2016-09-07
申请号：EP10190213.8
申请日：2010-11-05
CPC分类号： H01S5/02415 , G06F1/206 , H01S5/06804 , Y02D10/16
摘要： There is disclosed an electronic apparatus comprising a chip (11) within a casing (13). A thermoelectric cooler (14) has thermal connections to the chip and the casing and is configured to transport heat from the chip to the casing. A temperature measuring device (15) is provided for determining the temperature of the chip. A control system is configured to maintain the chip at a target temperature by controlling current supplied to the thermoelectric cooler in response to the measured temperature. A temperature selection system is configured to select the chip target temperature dynamically on the basis of the casing temperature.
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公开(公告)号：EP2191546B1
公开(公告)日：2018-01-17
申请号：EP08807113.9
申请日：2008-09-18
CPC分类号： H01S5/4031 , H01S5/0021 , H01S5/0224 , H01S5/02272 , H01S5/02476 , H01S5/02492
摘要： A high power laser source comprises a bar of laser diodes, a submount onto which said laser bar is affixed, and a cooler onto which said submount is affixed. The laser bar has a first coefficient of thermal expansion (CTEbar), the submount has a second coefficient of thermal expansion (CTEsub), and the cooler has a third coefficient of thermal expansion (CTEcool) the third coefficient (CTEcool) being higher than both said first coefficient (CTEbar) and said second coefficient (CTEsub). Contrary to the usual approach with a CTEsub matching the CTEbar, the second coefficient (CTEsub) is selected lower than both said first coefficient (CTEbar) and said third coefficient (CTEcool) according to the invention. A preferred range is CTEsub=k*CTEbar, with 0.4
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公开(公告)号：EP1897190B1
公开(公告)日：2017-01-25
申请号：EP06755802.3
申请日：2006-06-28
CPC分类号： H01S5/0425 , H01L2224/48463 , H01S5/02276 , H01S5/1039 , H01S5/16 , H01S5/2036 , H01S5/22
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8.发明授权A vertical cavity surface emitting laser having improved transverse mode control and a method of forming the same 有权相同的表面发射激光器的垂直腔具有改进的横模和制造方法的控制
公开(公告)号：EP1496583B1
公开(公告)日：2016-05-18
申请号：EP03015307.6
申请日：2003-07-07
发明人： Royo, Paul
CPC分类号： H01S5/18344 , H01S5/18313 , H01S5/18338 , H01S5/18355 , H01S5/18394 , H01S2301/166
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9.发明公开A SEMICONDUCTOR LASER DEVICE AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR LASER DEVICE 有权半导体激光器件及其制造方法的半导体激光器件
公开(公告)号：EP2748903A2
公开(公告)日：2014-07-02
申请号：EP12750802.6
申请日：2012-08-20
发明人： TRAUT, Silke , SAINTENOY, Stéphanie
IPC分类号： H01S5/028
CPC分类号： H01S5/0282 , H01S5/0283 , H01S5/18313 , H01S5/18352 , H01S5/18369 , H01S2301/176
摘要： A semiconductor laser device 100 formed on a semiconductor substrate 102, the device comprising : a passivation layer 118 arranged on an upper surface of the device structure for resisting moisture ingress, wherein the passivation layer comprises an inner layer 118a deposited on the upper surface of the device by atomic layer deposition and an outer layer 118b deposited on the inner layer, and comprising a material that is inert in the presence of water.
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