公开(公告)号：EP2166564A3

公开(公告)日：2011-11-02

申请号：EP09170481.7

申请日：2009-09-16

申请人： IMEC

发明人： Le, Quoc Toan ,  Kesters, Els ,  Vereecke, Guy

IPC分类号： H01L21/311 ,  G03F7/42

CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01L21/31133

摘要： The present invention is related to a method for removing a hardened photoresist layer from a substrate comprising a low-κ dielectric material preserving the characteristics of the low-k dielectric material, the method comprising (the steps of):
a) - providing a substrate comprising a hardened photoresist layer and a low-κ dielectric material at least partially exposed,
b) - forming C=C double bonds in the hardened photoresist by exposing the hardened photoresist to UV radiation having a wavelength between 200nm and 300nm in vacuum or in an inert atmosphere,
c) - breaking the C=C double bonds formed in step b) by reacting the hardened photoresist with ozone (O 3 ) or a mixture of ozone (O 3 ) and oxygen (O 2 ) thereby fragmenting the hardened photoresist,
d) - removing the fragmented photoresist obtained in step c) by wet processing with cleaning chemistries.

公开(公告)号：EP2166564A2

公开(公告)日：2010-03-24

申请号：EP09170481.7

申请日：2009-09-16

申请人： IMEC

发明人： Le, Quoc Toan ,  Kesters, Els ,  Vereecke, Guy

IPC分类号： H01L21/311

CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01L21/31133

摘要： The present invention is related to a method for removing a hardened photoresist layer from a substrate comprising a low-κ dielectric material preserving the characteristics of the low-k dielectric material, the method comprising (the steps of):
a) - providing a substrate comprising a hardened photoresist layer and a low-κ dielectric material at least partially exposed,
b) - forming C=C double bonds in the hardened photoresist by exposing the hardened photoresist to UV radiation having a wavelength between 200nm and 300nm in vacuum or in an inert atmosphere,
c) - breaking the C=C double bonds formed in step b) by reacting the hardened photoresist with ozone (O 3 ) or a mixture of ozone (O 3 ) and oxygen (O 2 ) thereby fragmenting the hardened photoresist,
d) - removing the fragmented photoresist obtained in step c) by wet processing with cleaning chemistries.

摘要翻译： 本发明涉及一种用于从包含低介电材料的低介电材料的衬底上去除硬化的光致抗蚀剂层的方法，所述低介电材料保留了低k电介质材料的特性，该方法包括（以下步骤）：a）提供衬底 包括硬化的光致抗蚀剂层和至少部分曝光的低º电介质材料，b）在硬化的光致抗蚀剂中形成C = C双键，在真空中或在真空中将硬化的光致抗蚀剂暴露于波长在200nm和300nm之间的UV辐射 惰性气氛，c） - 通过使硬化的光致抗蚀剂与臭氧（O 3）或臭氧（O 3）和氧（O 2）的混合物反应从而破坏硬化的光致抗蚀剂，从而破坏步骤b）中形成的C = C双键， d） - 通过用清洁化学物质的湿法处理去除步骤c）中获得的碎裂的光致抗蚀剂。

公开(公告)号：EP2166564B1

公开(公告)日：2017-04-12

申请号：EP09170481.7

申请日：2009-09-16

申请人： IMEC

发明人： Le, Quoc Toan ,  Kesters, Els ,  Vereecke, Guy

IPC分类号： H01L21/311 ,  G03F7/42

CPC分类号： H01L21/31138 ,  G03F7/427 ,  H01L21/31133