公开(公告)号：EP4451339A1

公开(公告)日：2024-10-23

申请号：EP23214836.1

申请日：2023-12-07

申请人： INTEL Corporation

发明人： KAVRIK, Mahmut Sami ,  TRONIC, Tristan A. ,  LUX, Jennifer ,  AVCI, Uygar E. ,  O`BRIEN, Kevin P.

IPC分类号： H01L29/08 ,  H01L29/24 ,  H01L29/423 ,  H01L21/34 ,  H01L29/778 ,  H01L29/06

摘要： Described herein are transistors with monolayer transition metal dichalcogenides (TMD) semiconductor material. TMD materials include combination of a transition metal (e.g., molybdenum or tungsten) and a chalcogen (e.g., sulfur or selenium) in a monolayer having a hexagonal crystal structure. A transistor has a single layer of TMD forming a channel region, and multiple layers of the TMD material at the source and drain regions. Upper portions of the multilayer TMD source and drain regions are doped, and conductive contacts are formed over the doped portions.