Apparatus and method for focussed ion beam deposition by controlling beam parameters
    2.
    发明公开
    Apparatus and method for focussed ion beam deposition by controlling beam parameters 失效
    通过控制光束参数聚焦离子束的装置的设备和方法沉积。

    公开(公告)号:EP0571727A1

    公开(公告)日:1993-12-01

    申请号:EP93104231.1

    申请日:1993-03-16

    IPC分类号: H01J37/317

    CPC分类号: H01J37/3178

    摘要: The disclosure describes a method and structure to control the focussed ion beam induced deposition of material. The structure includes a focussed ion beam which is directed onto a target surface. The ion beam is deflected to locations on the target surface and is blanked and unblanked at desired intervals. The deflection and blanking are controlled by timing means in response to computer signals. A precursor gas is adsorbed into the target surface and the ion beam selectively decomposes the adsorbed gas along a desired shape to provide material deposition. The shape of the deposition is specified by a number of successive beam spots. The spots can be specified to overlap adjacent spots if desired for better edge resolution, but in general, the optimum yield is obtained without overlap. The dwell time for each spot is set to provide high net yield for the deposited material. The beam is stepped to each position in the shape and the deposition is repeated. Alternatively, the beam could be moved in sequential line scans either stepwise or continuously between spots, but spot by spot deflection allows better control of the feature shape. After completing all the spots in the pattern, the process is repeated until a film of material of the desired thickness is built up.

    摘要翻译: 本发明描述的方法和结构,以控制材料的聚焦离子束诱导沉积。 该结构包括聚焦离子束的所有被引导到目标表面上。 该离子束被偏转到目标表面上的位置和被消隐和以期望的间隔未被阻断。 偏转和消隐是通过响应于计算机信号的定时装置来控制。 前体气体被吸附到目标表面和离子束选择性地分解吸附的气体沿着所希望的形状,以提供材料的沉积。 沉积的形状是由多个连续的束点的指定。 斑点可以指定重叠相邻光斑如果需要清除为更好的边缘分辨率,但在一般情况下,最佳的产率没有重叠得到。 每个点的停留时间被设置为提供高的净产量为所沉积的材料。 波束步进到的形状的每个位置,并且重复该沉积。 可替换地,光束能以顺序线移动扫描阶段性或连续性点之间,但光点通过点偏转允许特征形状的更好控制。 完成在图案中的所有斑点之后,重复该过程,直到所希望的厚度的材料制成的膜被建立起来了。

    Positioning method for mask set used in IC fabrication
    3.
    发明公开
    Positioning method for mask set used in IC fabrication 失效
    在IC制造掩模组使用的定位方法。

    公开(公告)号:EP0096224A1

    公开(公告)日:1983-12-21

    申请号:EP83104481.3

    申请日:1983-05-06

    IPC分类号: G03B41/00

    CPC分类号: G03F9/7076 G03F1/42 G03F1/70

    摘要: A method for marking a mask set to insure minimum mismatch between the masks when they are assembled into a set. Each mask in the set is evaluated against a known fixed standard, identified and marked such that, when the set is assembled and utilized to produce an integrated circuit, minimum mismatch between each element in each mask in the set will be realized. This is achieved by aligning each mask to a known standard, forming an alignment indicator (24a, b; 77,78) in the form of a scale on each (first) mask, and forming a vernier scale (23a, b; 73, 74) on each subsequent mask. The vernier scale is marked to indicate which element must be aligned with an element on the previous mask to minimize mismatch.