公开(公告)号：EP0903776A2

公开(公告)日：1999-03-24

申请号：EP98306005.4

申请日：1998-07-28

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  SIEMENS AKTIENGESELLSCHAFT

发明人： Ajmera, Atul C. ,  Dehm, Christine ,  Domenicucci, Anthony G. ,  Gifford, George G. ,  Loh, Stephen K. ,  Parks, Christopher ,  Sardesai, Viraji Y.

IPC分类号： H01L21/28 ,  H01L29/49

CPC分类号： H01L21/28061 ,  H01L29/4933

摘要： A "porous barrier" is formed without formation of a discrete barrier layer by enriching grain boundaries of a body of polysilicon with nitrogen to inhibit thermal mobility of silicon species therealong. In a polycide gate/interconnect structure, the reduced mobility of silicon suppresses agglomeration of silicon in a metal silicide layer formed thereon. Since silicon agglomeration is a precursor of a polycide inversion phenomenon, polycide inversion which can pierce an underlying oxide and cause device failure is effectively avoided. The increased thermal stability of polycide structures and other structures including a body of polysilicon thus increases the heat budget that can be withstood by the structure and increases the manufacturing process window imposed by the presence of polysilicon which can be exploited in other processes such as annealing to develop a low resistance phase of refractory metal silicide included in the polycide structure, drive-in annealing for formation of source/drain regions of field effect transistors and the like.

摘要翻译： 通过用氮富集多晶硅体的晶界而形成不形成离散阻挡层的“多孔阻挡层”，从而抑制硅物质的热迁移率。 在多晶硅栅极/互连结构中，硅的迁移率降低抑制了在其上形成的金属硅化物层中的硅的聚集。 由于硅团聚是多偶合反转现象的前体，因此有效地避免了可以刺穿下面的氧化物并导致器件故障的多偶极反转。 因此，多晶硅结构和包括多晶硅体在内的其他结构的热稳定性的增加，因此增加了可被该结构承受的热量预算，并且增加了由多晶硅的存在施加的制造工艺窗口，这可以在其它工艺中被利用，例如退火 开发包括在多晶硅结构中的难熔金属硅化物的低电阻相，用于形成场效应晶体管的源极/漏极区域的驱动退火等。

公开(公告)号：EP0903776B1

公开(公告)日：2006-10-11

申请号：EP98306005.4

申请日：1998-07-28

申请人： International Business Machines Corporation ,  SIEMENS AKTIENGESELLSCHAFT

发明人： Ajmera, Atul C. ,  Dehm, Christine ,  Domenicucci, Anthony G. ,  Gifford, George G. ,  Loh, Stephen K. ,  Parks, Christopher ,  Sardesai, Viraji Y.

IPC分类号： H01L21/28

CPC分类号： H01L21/28061 ,  H01L29/4933

公开(公告)号：EP0903776A3

公开(公告)日：1999-08-11

申请号：EP98306005.4

申请日：1998-07-28

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  SIEMENS AKTIENGESELLSCHAFT

发明人： Ajmera, Atul C. ,  Dehm, Christine ,  Domenicucci, Anthony G. ,  Gifford, George G. ,  Loh, Stephen K. ,  Parks, Christopher ,  Sardesai, Viraji Y.

IPC分类号： H01L21/28 ,  H01L29/49

CPC分类号： H01L21/28061 ,  H01L29/4933

摘要： A "porous barrier" is formed without formation of a discrete barrier layer by enriching grain boundaries of a body of polysilicon with nitrogen to inhibit thermal mobility of silicon species therealong. In a polycide gate/interconnect structure, the reduced mobility of silicon suppresses agglomeration of silicon in a metal silicide layer formed thereon. Since silicon agglomeration is a precursor of a polycide inversion phenomenon, polycide inversion which can pierce an underlying oxide and cause device failure is effectively avoided. The increased thermal stability of polycide structures and other structures including a body of polysilicon thus increases the heat budget that can be withstood by the structure and increases the manufacturing process window imposed by the presence of polysilicon which can be exploited in other processes such as annealing to develop a low resistance phase of refractory metal silicide included in the polycide structure, drive-in annealing for formation of source/drain regions of field effect transistors and the like.

摘要翻译： 通过用氮富集多晶硅体的晶界而形成不形成离散阻挡层的“多孔阻挡层”，从而抑制硅物质的热迁移率。 在多晶硅栅极/互连结构中，硅的迁移率降低抑制了在其上形成的金属硅化物层中的硅的聚集。 由于硅团聚是多偶合反转现象的前体，因此有效地避免了可以刺穿下面的氧化物并导致器件故障的多偶极反转。 因此，多晶硅结构和包括多晶硅体在内的其他结构的热稳定性的增加，因此增加了可被该结构承受的热量预算，并且增加了由多晶硅的存在施加的制造工艺窗口，这可以在其它工艺中被利用，例如退火 开发包括在多晶硅结构中的难熔金属硅化物的低电阻相，用于形成场效应晶体管的源极/漏极区域的驱动退火等。