公开(公告)号：EP3186030A4

公开(公告)日：2018-07-04

申请号：EP15836681

申请日：2015-08-28

申请人： IPG PHOTONICS CORP

发明人： SERCEL JEFFREY P ,  MENDES MARCO ,  SARRAFI ROUZBEH ,  SCHOENLY JOSHUA ,  SONG XIANGYANG ,  HANNON MATHEW ,  SOKOL MIROSLAW

IPC分类号： B23K26/38 ,  B23K26/06 ,  B23K26/0622 ,  B23K26/08 ,  B23K26/082 ,  B23K26/361 ,  B23K26/402

CPC分类号： B23K26/402 ,  B23K26/0613 ,  B23K26/0624 ,  B23K26/082 ,  B23K26/0853 ,  B23K26/0876 ,  B23K26/361 ,  B23K26/38 ,  B23K26/70 ,  B23K2203/50 ,  B23K2203/52 ,  B23K2203/54 ,  C03B33/0222 ,  Y02P40/57

摘要： Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).

公开(公告)号：EP3110592A4

公开(公告)日：2017-12-06

申请号：EP15754589

申请日：2015-02-27

申请人： IPG PHOTONICS CORP

发明人： MENDES MARCO ,  SERCEL JEFFREY P ,  SARRAFI ROUZBEH ,  SONG XIANGYANG ,  SCHOENLY JOSHUA ,  VAN GEMERT ROY ,  PORNEALA CRISTIAN

IPC分类号： B23K26/0622 ,  B23K26/064 ,  B23K26/55

CPC分类号： B23K26/0006 ,  B23K26/0604 ,  B23K2203/12

摘要： Multiple-beam laser processing may be performed on a workpiece using at least first and second laser beams with different characteristics (e.g., wavelengths and/or pulse durations). In some applications, an assist laser beam is directed at a target location on or within the workpiece to modify a property of the non-absorptive material. A process laser beam is directed at the target location and is coupled into absorption centers formed in the non-absorptive material to complete processing of the non-absorptive material. Multiple-beam laser processing may be used, for example, to drill holes in a substrate made of alumina or other transparent ceramics. In other applications, multiple-beam laser processing may be used in melting applications such as micro-welding, soldering, and forming laser fired contacts. In these applications, the assist laser beam may be used to modify a property of the material or to change the geometry of the parts.

公开(公告)号：EP2961559A4

公开(公告)日：2016-09-07

申请号：EP14757006

申请日：2014-02-28

申请人： IPG PHOTONICS CORP

发明人： KANCHARLA VIJAY ,  SHINER WILLIAM ,  MAYNARD STEVEN ,  SERCEL JEFFREY P ,  MENDES MARCO ,  SARRAFI ROUZBEH

IPC分类号： B23K26/00 ,  B23K26/36 ,  B23K26/38 ,  G02B5/30

CPC分类号： B23K26/38 ,  B23K26/0622 ,  B23K26/364 ,  B23K26/382 ,  B23K26/40 ,  B23K2203/50

摘要： Laser processing of sapphire is performed using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm (hereinafter "QCW laser"). Laser processing of sapphire using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 10%) and in an inert gas atmosphere such as argon or helium. Laser processing of sapphire using a QCW laser may further include the use of an assist laser having a shorter wavelength and/or pulse duration to modify a property of the sapphire substrate to form absorption centers, which facilitate coupling of the laser light pulses of the QCW laser into the sapphire.