公开(公告)号：EP3767667A1

公开(公告)日：2021-01-20

申请号：EP20159980.0

申请日：2020-02-28

申请人： IQE plc

发明人： Hammond, Richard ,  Nelson, Drew ,  Gott, Alan ,  Pelzel, Rodney ,  Clark, Andrew

IPC分类号： H01L21/3063 ,  H01L21/02 ,  H01L29/06

摘要： A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over the fully depleted porous layer. Additionally, a process of making the layered structure including forming the fully depleted porous layer and epitaxial layer grown over the porous layer is described herein.