公开(公告)号：EP3767667A1

公开(公告)日：2021-01-20

申请号：EP20159980.0

申请日：2020-02-28

申请人： IQE plc

发明人： Hammond, Richard ,  Nelson, Drew ,  Gott, Alan ,  Pelzel, Rodney ,  Clark, Andrew

IPC分类号： H01L21/3063 ,  H01L21/02 ,  H01L29/06

摘要： A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over the fully depleted porous layer. Additionally, a process of making the layered structure including forming the fully depleted porous layer and epitaxial layer grown over the porous layer is described herein.

公开(公告)号：EP4220688A2

公开(公告)日：2023-08-02

申请号：EP23153665.7

申请日：2023-01-27

申请人： IQE plc

发明人： Hammond, Richard ,  Andrew, Clark ,  Pelzel, Rodney

IPC分类号： H01L21/306 ,  H01L29/51 ,  H01L29/06

摘要： A method of fabricating a layered structure comprising growing an epitaxial layer on a substrate with a first resistivity proximal to the substrate and a second resistivity (less than the first) distal therefrom. Porosify the epitaxial layer to form a porous layer with porosity >30% proximal to the substrate and ≤25% distal from the substrate. Epitaxially grow a semiconductor (channel) layer over the porous layer. Also a layered structure comprising: a substrate; a porous layer; and an epitaxial semiconductor (channel) layer. The porous layer has a first porosity >30% proximal to the substrate and a second porosity ≤25% adjacent to the semiconductor layer. The two different porosities can be optimised for different functions. The higher porosity is effective at insulating the channel from the substrate. The lower porosity provides a crystalline structure with single crystal orientation exposed that supports the channel layer comprising high quality, low defect, epitaxial growth.

公开(公告)号：EP4220688A3

公开(公告)日：2023-08-09

申请号：EP23153665.7

申请日：2023-01-27

申请人： IQE plc

发明人： Hammond, Richard ,  Andrew, Clark ,  Pelzel, Rodney

IPC分类号： H01L21/306 ,  H01L29/51 ,  H01L29/06

摘要： A method of fabricating a layered structure comprising growing an epitaxial layer on a substrate with a first resistivity proximal to the substrate and a second resistivity (less than the first) distal therefrom. Porosify the epitaxial layer to form a porous layer with porosity >30% proximal to the substrate and ≤25% distal from the substrate. Epitaxially grow a semiconductor (channel) layer over the porous layer. Also a layered structure comprising: a substrate; a porous layer; and an epitaxial semiconductor (channel) layer. The porous layer has a first porosity >30% proximal to the substrate and a second porosity ≤25% adjacent to the semiconductor layer. The two different porosities can be optimised for different functions. The higher porosity is effective at insulating the channel from the substrate. The lower porosity provides a crystalline structure with single crystal orientation exposed that supports the channel layer comprising high quality, low defect, epitaxial growth.

公开(公告)号：EP3896850A1

公开(公告)日：2021-10-20

申请号：EP21167114.4

申请日：2021-04-07

申请人： IQE plc

发明人： Clark, Andrew ,  Pelzel, Rodney ,  Hammond, Richard

IPC分类号： H03H3/08 ,  H03H9/02 ,  H01L41/319 ,  H03H9/145 ,  H03H3/02

摘要： A layered structure (100) for transmission of an acoustic wave, the layered structure (100) comprising: a substrate layer (102); and a second layer (104) over the substrate layer (102), wherein the second layer (104) comprises a plurality of discrete portions (105) adjacent to each other, each discrete portion (105) of the plurality of discrete portions (105) comprising a first subregion (104A) and a second subregion (104B). Also an epitaxial layer (108), grown over the second layer (104), for transmission of the acoustic wave in a major plane of the epitaxial layer (108), wherein a periodicity (λ) of a wavelength of the acoustic wave to be transmitted through the epitaxial layer (108) is approximately equal to a sum of a width (d A ) of the first subregion (104A) and a width (d B ) of the second subregion (104B).