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公开(公告)号:EP1741121A1
公开(公告)日:2007-01-10
申请号:EP05735697.4
申请日:2005-04-11
CPC分类号: H01J31/48 , G01T1/2957 , H01J31/26 , H01J31/49 , H01J2231/50068 , H01J2231/5016
摘要: An intensified solid-state imaging sensor (41) includes a photo cathode (54) for converting light from an image into electrons, an electron multiplying device (53) for receiving electrons from the photo cathode, and a solid-state image sensor (56) including a plurality of pixels for receiving the electrons from the electron multiplying device through a plurality of channels of the electron multiplying device. The solid-state image sensor generates an intensified image signal from the electrons received from the electron multiplying device. The plurality of channels are arranged in a plurality of channel patterns, and the plurality of pixels are arranged in a plurality of pixel patterns. Each of the plurality of channel patterns is mapped to a respective one of the plurality of pixel patterns such that electron signals from each of the plurality of channel patterns is substantially received by the single respective one of the plurality of pixel patterns.
摘要翻译: 增强型固态成像传感器(41)包括:用于将来自图像的光转换为电子的光电阴极(54);用于从光阴极接收电子的电子倍增器(53);以及固态图像传感器 ),其包括用于通过电子倍增器的多个通道从电子倍增器接收电子的多个像素。 固态图像传感器根据从电子倍增器接收的电子来生成强化图像信号。 多个通道排列成多个通道图案,并且多个像素排列成多个像素图案。 多个沟道图案中的每一个被映射到多个像素图案中的相应一个,使得来自多个沟道图案中的每一个的电子信号基本上被多个像素图案中的单个相应一个像素图案接收。
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公开(公告)号:EP1436825B1
公开(公告)日:2010-06-16
申请号:EP02800954.6
申请日:2002-10-09
CPC分类号: H01J31/26 , G01T1/2957 , H01J31/48
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公开(公告)号:EP1741121B1
公开(公告)日:2009-11-11
申请号:EP05735697.4
申请日:2005-04-11
CPC分类号: H01J31/48 , G01T1/2957 , H01J31/26 , H01J31/49 , H01J2231/50068 , H01J2231/5016
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公开(公告)号:EP1436825A1
公开(公告)日:2004-07-14
申请号:EP02800954.6
申请日:2002-10-09
CPC分类号: H01J31/26 , G01T1/2957 , H01J31/48
摘要: An intensified hybrid solid-state sensor includes an imaging device comprising a solid-state sensor (56) assembled with an image intensifier cathode (54), microchannel plate (MCP), (53) and body envelope (61). This device combines the best functions of the image intensifier, good signal-to-noise ratio and high logarithmic gain, with the electronic read-out functions either of a Complementary Metal Oxide Semiconductor (CMOS) or charged coupled device (CCD). Applications for this invention are primarily night vision systems where good low light sensitivity and high gain are required.
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