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公开(公告)号：EP2144271B1
公开(公告)日：2014-04-09
申请号：EP08751624.1
申请日：2008-04-25
CPC分类号： H01L31/085 , G01T1/246 , H01J31/28 , H01J31/49 , H01L27/14676 , H04N5/32
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2.发明公开DETECTEUR A MULTIPLICATEUR D'ELECTRONS FORME D'UNE COUCHE DE NANODIAMANT HAUTEMENT DOPE 有权具有高掺杂纳米金刚石层ELEKTRONVERVIELFACHENDER探测器
公开(公告)号：EP2583298A1
公开(公告)日：2013-04-24
申请号：EP11725751.9
申请日：2011-06-17
申请人： Photonis France
CPC分类号： G01T1/247 , B82Y15/00 , H01J1/32 , H01J29/023 , H01J31/48 , H01J31/49 , H01J31/506 , H01J43/04 , H01J43/22 , H01J43/246 , H01J2231/5001 , H01J2231/50047
摘要： A system for detecting electromagnetic radiation or an ion flow, including an input device for receiving the electronic radiation or the ion flow and emitting primary electrons in response, a multiplier of electrons in transmission, for receiving the primary electrons and emitting secondary electrons in response, and an output device for receiving the secondary electrons and emitting an output signal in response. The electron multiplier includes at least one nanocrystalline diamond layer doped with boron in a concentration of higher than 5·1019 cm-3.
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公开(公告)号：EP1741121B1
公开(公告)日：2009-11-11
申请号：EP05735697.4
申请日：2005-04-11
CPC分类号： H01J31/48 , G01T1/2957 , H01J31/26 , H01J31/49 , H01J2231/50068 , H01J2231/5016
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4.发明公开STRAHLUNGSWANDLER MIT EINEM SZINTILLATOR, EINER PHOTOKATHODE UND EINEM ELEKTRONENVERVIELFACHER 有权WITH A闪烁光阴极和光电倍增辐射转换器
公开(公告)号：EP1266391A2
公开(公告)日：2002-12-18
申请号：EP01935937.1
申请日：2001-03-22
CPC分类号： H01J31/49 , H01J2231/50036 , H01J2231/50068 , H01J2231/501
摘要： The invention relates to a radiation converter, comprising a radiation absorber (2), for the generation of photons as a function of the intensity of the incident x-ray radiation and a photocathode (3), arranged within the radiation absorber (2), at a distance (a) in the direction of radiation. Said photocathode (3) is for the generation of electrodes as a function of the photons emitted by the radiation absorber (2), with a device for accelerating the electrons emitted by the photocathode to an electron detector (5). Said detector generates an electrical signal as a function of the arriving electrons. An electron multiplier (4) is arranged between the photocathode (3) and the electron detector (5), whereby the electrons emitted y the photocathode (3) may be multiplied by the electron multiplier (4).
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公开(公告)号：EP0168883A1
公开(公告)日：1986-01-22
申请号：EP85201095.8
申请日：1985-07-04
发明人： Mulder, Hendrik
CPC分类号： H01J31/507 , H01J31/49
摘要： An X-ray detecor tube comprising an elongate housing (I) having an elongate cathode (2) and an elongate anode (4) mounted therein to extend essentially parallel with each other. During operation, an electrical potential is applied across the anode and the cathode of the evacuated tube. A channel plate (3) is mounted inside the housing between the cathode and the anode to extend essentially parallel therewith.
摘要翻译： 一种X射线检测管，包括具有细长阴极（2）和安装在其中的细长阳极（4）的细长壳体（1），其基本上彼此平行地延伸。 在运行期间，在真空管的阳极和阴极之间施加电位。 通道板（3）安装在壳体内部的阴极和阳极之间以与其基本平行延伸。
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公开(公告)号：EP3107115B1
公开(公告)日：2018-05-02
申请号：EP16175120.1
申请日：2016-06-17
申请人： Photek Limited
IPC分类号： H01J43/12
CPC分类号： G01T1/2935 , H01J31/49 , H01J43/12
摘要： A detector for an electron multiplier comprising: a substrate (102) comprising a dielectric material, the substrate having a first face (110) and an opposing second face (108); a charge collector (122) provided adjacent the first face (110) of the substrate (102); an anode (104a-d) within the substrate (102), the anode (104a-d) spaced from the first face (110), such that the anode (104a-d) is capacitively coupled to the charge collector (122), so that charge incident on the charge collector (122) generates an image charge on the anode (104a-d); and a conduit contact (106a-d), coupled to the anode (104a-d) and passing through the substrate (102) to the second face (108) of the substrate (108).
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公开(公告)号：EP3028292A1
公开(公告)日：2016-06-08
申请号：EP13744444.4
申请日：2013-07-31
摘要： An electron filtering layer placed on a photocathode of a UV light detector allows to selectively filter out electrons generated from a photoconversion of long wavelengths. The filter may be tuned by selecting the material and the thickness of the electron filtering layer. By means of the filtering layer, background noise due to visible parts of the spectrum may be efficiently suppressed. Applications of the invention include a solar-blind flame and/or smoke detector.
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8.发明授权STRAHLUNGSWANDLER MIT EINEM SZINTILLATOR, EINER PHOTOKATHODE UND EINEM ELEKTRONENVERVIELFACHER 有权WITH A闪烁光阴极和光电倍增辐射转换器
公开(公告)号：EP1266391B1
公开(公告)日：2008-07-16
申请号：EP01935937.1
申请日：2001-03-22
CPC分类号： H01J31/49 , H01J2231/50036 , H01J2231/50068 , H01J2231/501
摘要： The invention relates to a radiation converter, comprising a radiation absorber (2), for the generation of photons as a function of the intensity of the incident x-ray radiation and a photocathode (3), arranged within the radiation absorber (2), at a distance (a) in the direction of radiation. Said photocathode (3) is for the generation of electrodes as a function of the photons emitted by the radiation absorber (2), with a device for accelerating the electrons emitted by the photocathode to an electron detector (5). Said detector generates an electrical signal as a function of the arriving electrons. An electron multiplier (4) is arranged between the photocathode (3) and the electron detector (5), whereby the electrons emitted y the photocathode (3) may be multiplied by the electron multiplier (4).
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公开(公告)号：EP1154457B1
公开(公告)日：2003-11-26
申请号：EP99900652.1
申请日：1999-01-21
发明人： SUYAMA, Motohiro Hamamatsu Photonics K.K. , KAGEYAMA, Akihiro Hamamatsu Photonics K.K. , MURAMATSU, Masaharu Hamamatsu Photonics K.K.
CPC分类号： H01J31/26 , H01J29/92 , H01J31/49 , H01J2229/922 , H01J2231/50068
摘要： In an electron tube (1), a space (S) between the periphery (15b) of a semiconductor device (15) and a stem (11) is filled with an insulating resin (20). Therefore, the insulating resin (20) functions as a reinforcing member even during the assembly of the electron tube (1) under high-temperature condition, thereby preventing a bump (16) from coming off a bump connection part (19). Since the space (S) is only partly closed by the resin (20), the space between the semiconductor device (15) and the stem (11) is ensured a ventilability. That is, no air reservoir is formed between an electron incidence part (15a) at the center of the semiconductor device (15) and the surface (C) of the stem (11), whereby air expanding at high temperature does not damage the electron incidence part (15a) of the back-incidence semiconductor device (15).
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公开(公告)号：EP1152448A1
公开(公告)日：2001-11-07
申请号：EP99901128.1
申请日：1999-01-21
IPC分类号： H01J29/44 , H01J31/26 , H01J31/49 , H01L27/148
CPC分类号： H01J31/26 , H01J31/49 , H01J2231/50073
摘要： An electron tube 10 mainly includes a sleeve 12, an input plate 14 having a photocathode surface 18, a stem 16 and a CCD 20. A vacuum is provided in an interior of the electron tube 10. The CCD 20 is fixed onto the stem such that a rear surface B faces the photocathode surface 18. In the CCD 20, on a single conductive type semiconductor substrate 64, a buried layer 66, a barrier region 68, a SiO 2 layer 70, a storage electrode layer 72, a transmission electrode layer 74, and a barrier electrode layer 76 are formed at their predetermined positions. A PSG film 78 is formed at an entire front surface A over these layers to flatten the surface of the CCD 20. Further, SiN film 106 mainly composed of SiN is formed above the PSG film over the entire front surface A.
摘要翻译： 电子管10主要包括套筒12，具有光电阴极表面18的输入板14，杆16和CCD 20.在电子管10的内部设有真空。CCD 20固定在杆上 后表面B面对光电阴极表面18.在CCD 20中，在单个导电型半导体衬底64上，埋层66，势垒区68，SiO 2层70，存储电极层72，透射电极层 74和阻挡电极层76形成在其预定位置。 在这些层的整个前表面A上形成PSG膜78，以平坦化CCD 20的表面。此外，在整个前表面A上形成主要由SiN构成的SiN膜106在PSG膜之上。
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