A METHOD FOR MEASURING THE TRAP DENSITY IN A 2-DIMENSIONAL SEMICONDUCTOR MATERIAL

    公开(公告)号:EP3913356A1

    公开(公告)日:2021-11-24

    申请号:EP20175167.4

    申请日:2020-05-18

    IPC分类号: G01N21/64

    摘要: According to the method of the invention, a spot on a layer (3) of a 2D semiconductor material deposited on a support substrate (2;20,21) is irradiated so as to generate excitons, so that photons are emitted from the layer. The photoluminescence spectrum is recorded and this is repeated for different values of the charge carrier concentration in the layer. The modulation of the charge carrier concentration may be realized by modulating the output power of the light source (1) used to irradiate the sample, preferably a laser. The relation is thereby recorded between the ratio of the photoluminescence intensity of a first peak in the spectrum related to radiative recombination from indirect bandgaps to the intensity of a second peak in the spectrum related to radiative recombination from direct bandgaps, and the carrier concentration. This recorded relation is fitted to a theoretical model of the ratio that takes into account multiple recombination mechanisms, radiative and non-radiative. From this fitting process, the trap density within the bandgap is derived. The invention is equally related to an apparatus configured to perform the method of the invention.

    Improved cleaning of plasma chamber walls by adding of noble gas cleaning step
    4.
    发明公开
    Improved cleaning of plasma chamber walls by adding of noble gas cleaning step 有权
    Verbesserte Plasmakammerreinigung durchHinzufügeneiner Edelgas-Reinigungsstufe

    公开(公告)号:EP2034046A2

    公开(公告)日:2009-03-11

    申请号:EP08163870.2

    申请日:2008-09-08

    IPC分类号: C23C16/44

    CPC分类号: C23C16/4405 B08B7/0057

    摘要: An improved reaction chamber and chamber cleaning process are disclosed able to remove water residues by making use of noble-gas plasma reactions. The chamber is easy to operate and the method is easily applicable and may be combined with standard cleaning procedure. A noble-gas plasma (e.g. He) that emits high energy EUV photons (E>20 eV) which is able to destruct water molecules forming electronically excited oxygen atoms is used to remove the adsorbed water.

    摘要翻译: 公开了一种改进的反应室和室清洁方法,能够通过使用惰性气体等离子体反应来除去水残余物。 该室容易操作,方法易于应用,可与标准清洗程序结合使用。 使用能够破坏形成电子激发的氧原子的水分子的高能量EUV光子(E> 20eV)的稀有气体等离子体(例如He)来除去吸附的水。