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    A METHOD FOR MEASURING THE TRAP DENSITY IN A 2-DIMENSIONAL SEMICONDUCTOR MATERIAL
    1.
    发明公开
    A METHOD FOR MEASURING THE TRAP DENSITY IN A 2-DIMENSIONAL SEMICONDUCTOR MATERIAL 审中-公开

    公开(公告)号：EP3913356A1

    公开(公告)日：2021-11-24

    申请号：EP20175167.4

    申请日：2020-05-18

    申请人： Imec VZW ,  Katholieke Universiteit Leuven KU Leuven Research & Development

    发明人： Leonhardt, Alessandra ,  Lockhart de la Rosa, Cesar Javier ,  De Gendt, Stefan ,  Huyghebaert, Cedric ,  Brems, Steven ,  Nuytten, Thomas

    IPC分类号： G01N21/64

    摘要： According to the method of the invention, a spot on a layer (3) of a 2D semiconductor material deposited on a support substrate (2;20,21) is irradiated so as to generate excitons, so that photons are emitted from the layer. The photoluminescence spectrum is recorded and this is repeated for different values of the charge carrier concentration in the layer. The modulation of the charge carrier concentration may be realized by modulating the output power of the light source (1) used to irradiate the sample, preferably a laser. The relation is thereby recorded between the ratio of the photoluminescence intensity of a first peak in the spectrum related to radiative recombination from indirect bandgaps to the intensity of a second peak in the spectrum related to radiative recombination from direct bandgaps, and the carrier concentration. This recorded relation is fitted to a theoretical model of the ratio that takes into account multiple recombination mechanisms, radiative and non-radiative. From this fitting process, the trap density within the bandgap is derived. The invention is equally related to an apparatus configured to perform the method of the invention.

    A TWO-DIMENSIONAL MATERIAL SEMICONDUCTOR DEVICE
    3.
    发明公开
    A TWO-DIMENSIONAL MATERIAL SEMICONDUCTOR DEVICE 审中-公开
    二维材料半导体器件

    公开(公告)号：EP3185303A1

    公开(公告)日：2017-06-28

    申请号：EP16160174.5

    申请日：2016-03-14

    申请人： IMEC VZW ,  Katholieke Universiteit Leuven

    发明人： Pourtois, Geoffrey ,  Lu, Anh Khoa Augustin ,  Huyghebaert, Cedric

    IPC分类号： H01L29/778 ,  H01L29/40 ,  H01L29/78 ,  H01L29/24 ,  H01L29/16

    CPC分类号： H01L29/66977 ,  H01L29/16 ,  H01L29/24 ,  H01L29/402 ,  H01L29/778 ,  H01L29/7831 ,  H01L29/78645 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696

    摘要： A semiconductor device is disclosed comprising a two-dimensional (2D) material layer, the 2D material layer comprising a channel region in between a source region and a drain region; a first gate stack and a second gate stack in contact with the 2D material layer, the first and second gate stack being spaced apart over a distance; the first gate stack located on the channel region of the 2D material layer and in between the source region and the second gate stack, the first gate stack arranged to control the injection of carriers from the source region to the channel region and the second gate stack located on the channel region of the 2D material layer; the second gate stack arranged to control the conduction of the channel region.

    摘要翻译： 公开了一种包括二维（2D）材料层的半导体器件，该2D材料层包括位于源极区和漏极区之间的沟道区; 与所述2D材料层接触的第一栅极叠层和第二栅极叠层，所述第一和第二栅极叠层间隔开一段距离; 所述第一栅叠层位于所述2D材料层的所述沟道区上并且位于所述源区和所述第二栅叠层之间，所述第一栅叠层设置成控制载流子从所述源区到所述沟道区的注入以及所述第二栅叠层 位于2D材料层的沟道区上; 第二栅极叠层被安排成控制沟道区域的导电。

    Method for producing interconnect structures for integrated circuits
    7.
    发明授权
    Method for producing interconnect structures for integrated circuits 有权

    公开(公告)号：EP2194574B1

    公开(公告)日：2018-11-07

    申请号：EP09177673.2

    申请日：2009-12-01

    申请人： IMEC VZW

    发明人： Huyghebaert, Cedric ,  Vaes, Jan ,  Van Olmen, Jan

    IPC分类号： H01L21/768 ,  H01L23/48

    CPC分类号： H01L21/76898 ,  H01L21/76802 ,  H01L21/7684

    摘要： The present invention is related to method for producing a semiconductor device comprising the steps of: - providing a semiconductor substrate (1), comprising active components on the surface of said substrate, - depositing a top layer (2) of dielectric material on the surface of said substrate or on other dielectric layers present on said surface, - etching at least one first opening (7) at least through said top layer, filling said opening(s) at least with a first conductive material (8), and performing a first CMP step, to form said first conductive structures (3,26), - etching at least one second opening (13) at least through said top layer, filling said opening(s) at least with a second conductive material (10), and performing a second CMP step, to form said second conductive structures (4,24), wherein the method comprises the step of depositing a common CMP stopping layer (5,25) on said dielectric top layer, before the steps of etching and filling said first opening(s), so that said same CMP stopping layer is used for stopping the CMP process after filling of the first opening(s) as well as the CMP process after filling of the second opening(s). The invention is equally related to devices obtainable by the method of the invention.

    Method for transfering a graphene layer
    8.
    发明公开
    Method for transfering a graphene layer 审中-公开
    Verfahren zurÜbertragungeiner Graphenschicht

    公开(公告)号：EP2849210A1

    公开(公告)日：2015-03-18

    申请号：EP13184696.6

    申请日：2013-09-17

    申请人： IMEC VZW

    发明人： Huyghebaert, Cedric ,  Vereecken, Philippe M. ,  Pourtois, Geoffrey

    IPC分类号： H01L21/18

    摘要： A method for transferring a graphene layer (1) from a metal substrate (2) to a second substrate (3) comprising:
    a. Providing a graphene layer (1) on said metal substrate (2),
    b. Adsorbing hydrogen atoms on said metal substrate (2) by passing protons through said graphene layer (1),
    c. Treating said metal substrate (2) having adsorbed hydrogen atoms thereon in such a way as to form hydrogen gas from said adsorbed hydrogen atoms, thereby detaching said graphene layer (1) from said metal substrate (2),
    d. Transferring said graphene layer (1) to said second substrate (3), and
    e. Optionally reusing said metal substrate (2) in a subsequent step a.

    摘要翻译： 一种用于将石墨烯层（1）从金属基板（2）转移到第二基板（3）的方法，包括：a。 在所述金属基板（2）上设置石墨烯层（1），b。 通过使质子通过所述石墨烯层（1）吸附所述金属基底（2）上的氢原子，c。 处理其上具有吸附氢原子的所述金属基底（2），以便从所述吸附的氢原子形成氢气，从而将所述石墨烯层（1）从所述金属基底（2）分离，d。 将所述石墨烯层（1）转移到所述第二衬底（3），以及e。 任选地在随后的步骤a中重新使用所述金属基底（2）。