公开(公告)号：EP1668675A1

公开(公告)日：2006-06-14

申请号：EP04775590.5

申请日：2004-08-31

申请人： Infineon Technologies AG

发明人： ZHUANG, Haoren ,  EGGER, Ulrich ,  BRUCHHAUS, Rainer ,  HORNIK, Karl ,  LIAN, Jingyu ,  GERNHARDT, Stefan

IPC分类号： H01L21/02 ,  H01L21/8246 ,  H01L27/115

CPC分类号： H01L27/11502 ,  H01L21/31122 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60

摘要： Ferrocapacitors having a vertical structure are formed by a process in which a ferroelectric layer (33) is deposited over an insulator (31). In a first etching stage, the ferroelectric material is etched to form openings (35) in it, leaving the insulating layer substantially intact. Then a conductive layer (39) is deposited into the openings formed in the ferroelectric layer, forming electrodes on the sides of the openings. Further etching is performed to form gaps in the AI2O3 layer (31), for making connections to conductive elements (3) beneath it. Thus, by the time the second etching step is performed, there are already electrodes overlying the sides of the ferroelectric material, without insulating fences in between.