公开(公告)号：EP1668676A1

公开(公告)日：2006-06-14

申请号：EP04775591.3

申请日：2004-08-31

申请人： Infineon Technologies AG

发明人： ZHUANG, Haoren ,  BRUCHHAUS, Rainer ,  EGGER, Ulrich ,  LIAN, Jingyu ,  NAGEL, Nicolas

IPC分类号： H01L21/02 ,  H01L21/8246 ,  H01L27/115

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A vertical capacitor of an FeRAM device is formed by depositing conductive material and etching it to form electrodes, which are located over openings in an insulating layer so that they are electrically connected to lower levels of the structure. A layer of ferroelectric material is formed on the sides of the electrodes, and etched to a desired, uniform thickness. Conductive material is deposited over the ferroelectric material to form a uniform surface onto which another insulating layer can be deposited. Since this process does not include etching of an insulating layer at a time between the formation of the electrodes and the deposition of the ferroelectric material, no fences of insulating material are formed between them. The geometry can be accurately controlled, to give uniform electric fields and reliable operating parameters.

公开(公告)号：EP1668677A1

公开(公告)日：2006-06-14

申请号：EP04775605.1

申请日：2004-09-03

申请人： Infineon Technologies AG

发明人： ZHUANG, Haoren ,  NAGEL, Nicolas ,  LIAN, Jingyu ,  BRUCHHAUS, Rainer

IPC分类号： H01L21/02

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65 ,  H01L28/92

摘要： A device and method for forming a capacitor device comprises forming a substrate, forming a first interlayer dielectric layer on the substrate and forming two or more contact plugs through the substrate. A conducting layer is formed on the first interlayer dielectric layer and an electrode is formed on alternate ones of the contact plugs by etching the conducting layer. The etched electrodes are then coated with a ferroelectric layer. The ferroelectric layer is etched from the surfaces separating the contact plugs and additional electrodes are created by filling the spaces between the electrodes on alternate ones of the contact plugs with a conductive material to establish electrical contact between the plugs and the electrodes.

公开(公告)号：EP1680807A1

公开(公告)日：2006-07-19

申请号：EP04775612.7

申请日：2004-09-09

申请人： Infineon Technologies AG

发明人： LIAN, Jingyu

IPC分类号： H01L21/02

CPC分类号： H01L28/55 ,  H01L21/76897 ,  H01L27/11507

摘要： A ferroelectric capacitor device and method for producing such a device comprises forming a substrate, and forming a contact plug passing through the substrate. An electrically insulating layer is formed on the substrate, and a first electrode is formed on the electrically insulating layer. A ferroelectric layer is formed on the first electrode and a second electrode is formed on the ferroelectric layer. The first electrode is then electrically connected to the plug through the electrically insulating layer.

公开(公告)号：EP1668675A1

公开(公告)日：2006-06-14

申请号：EP04775590.5

申请日：2004-08-31

申请人： Infineon Technologies AG

发明人： ZHUANG, Haoren ,  EGGER, Ulrich ,  BRUCHHAUS, Rainer ,  HORNIK, Karl ,  LIAN, Jingyu ,  GERNHARDT, Stefan

IPC分类号： H01L21/02 ,  H01L21/8246 ,  H01L27/115

CPC分类号： H01L27/11502 ,  H01L21/31122 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60

摘要： Ferrocapacitors having a vertical structure are formed by a process in which a ferroelectric layer (33) is deposited over an insulator (31). In a first etching stage, the ferroelectric material is etched to form openings (35) in it, leaving the insulating layer substantially intact. Then a conductive layer (39) is deposited into the openings formed in the ferroelectric layer, forming electrodes on the sides of the openings. Further etching is performed to form gaps in the AI2O3 layer (31), for making connections to conductive elements (3) beneath it. Thus, by the time the second etching step is performed, there are already electrodes overlying the sides of the ferroelectric material, without insulating fences in between.