公开(公告)号：EP1702369A1

公开(公告)日：2006-09-20

申请号：EP04802810.4

申请日：2004-11-24

申请人： Infineon Technologies AG

发明人： SEZI, Recai ,  WALTER, Andreas ,  ENGL, Reimund ,  MALTENBERGER, Anna ,  DEHM, Christine ,  SITARAM, Arkalgud ,  KASKO, Ihar ,  NÜTZEL, Joachim ,  KRIZ, Jakob ,  MIKOLAJICK, Thomas ,  PINNOW, Cay-Uwe

IPC分类号： H01L51/00 ,  H01L51/05

CPC分类号： H01L51/0036 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01L27/28 ,  H01L51/0051 ,  H01L51/0062 ,  H01L51/0595

摘要： The invention relates to a semiconductor arrangement comprising at least one non-volatile memory cell that is provided with a first electrode which consists of at least two layers. Said semiconductor arrangement further comprises an organic material that forms a bond with the layer of the first electrode, which is in direct contact therewith. The invention also relates to a method for producing said non-volatile memory cell, a semiconductor arrangement comprising a plurality of inventive memory cells, and a method for the production thereof.