公开(公告)号：EP1454193B1

公开(公告)日：2007-10-10

申请号：EP02805247.0

申请日：2002-11-25

申请人： Infineon Technologies AG

发明人： HENNIG, Mario ,  KÖHLE, Roderick ,  KUNKEL, Gerhard ,  PFORR, Rainer ,  VOIGT, Ina

IPC分类号： G03F1/00

CPC分类号： G03F1/30

摘要： The invention relates to a phase shifting mask (8) having symmetrical structures (1, 2) for the production of adjacent pairs (5) of structures (1', 2') on a semiconductor wafer (9), such as pairs of trench capacitors for memory modules, the structures (1, 2) inside the pair having a phase deviation difference of 180° in relation to each other. The dimensions of the structures at the limit of resolution of the lighting system enable the influence of lens aberrations on the difference in line width created between the right and the left to be reduced. The invention also relates to a method for producing the structures (1', 2') on the wafer (9), consisting of a step in which the phase attribution to the right structure (2) or left structure (1) is selected according to the sign of the difference in line width when said difference is measured without phase attribution, using the same lighting system.

公开(公告)号：EP1221072A1

公开(公告)日：2002-07-10

申请号：EP99955723.4

申请日：1999-09-17

申请人： Infineon Technologies AG

发明人： GRASSMANN, Andreas ,  FRIEDRICH, Christoph ,  GRIESINGER, Uwe ,  PFORR, Rainer ,  WIDMANN, Dietrich

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： G03F1/34 ,  G03F7/2022

摘要： The invention relates to a phase mask for lithographically producing small structures at the border of a resolution that is provided by the wavelength of a radiation. The phase mask contains first areas (A) and second areas (B) which shift phases in relation to the first areas and are adjacent said first areas. Said areas serve for producing a sudden phase shift along the borders between the first and second areas. The inventive phase mask is characterised in that first areas contact each other over edges and at points (P) where second areas also contact each other over edges in such a way that borders between the first and second areas converge at said points which are impermeable for radiation. The invention enables the exposure of very small contact holes by means of only one exposure and thus results in reduced costs in the production of integrated semiconductor circuits.

公开(公告)号：EP1221072B1

公开(公告)日：2005-06-08

申请号：EP99955723.4

申请日：1999-09-17

申请人： Infineon Technologies AG

发明人： GRASSMANN, Andreas ,  FRIEDRICH, Christoph ,  GRIESINGER, Uwe ,  PFORR, Rainer ,  WIDMANN, Dietrich

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： G03F1/34 ,  G03F7/2022

摘要： The invention relates to a phase mask for lithographically producing small structures at the border of a resolution that is provided by the wavelength of a radiation. The phase mask contains first areas (A) and second areas (B) which shift phases in relation to the first areas and are adjacent said first areas. Said areas serve for producing a sudden phase shift along the borders between the first and second areas. The inventive phase mask is characterised in that first areas contact each other over edges and at points (P) where second areas also contact each other over edges in such a way that borders between the first and second areas converge at said points which are impermeable for radiation. The invention enables the exposure of very small contact holes by means of only one exposure and thus results in reduced costs in the production of integrated semiconductor circuits.

公开(公告)号：EP1334406A2

公开(公告)日：2003-08-13

申请号：EP01996769.4

申请日：2001-11-14

申请人： Infineon Technologies AG

发明人： GRIESINGER, Uwe ,  HENNIG, Mario ,  KNOBLOCH, Jürgen ,  PFORR, Rainer ,  VORWERK, Manuel

IPC分类号： G03F1/00 ,  G03F7/20 ,  G03F1/14

CPC分类号： G03F7/70441 ,  G03F1/29 ,  G03F7/70433

摘要： According to the invention, auxiliary openings (2) are allocated to the openings (1) on a mask which are to be transferred onto a wafer. Said auxiliary openings have a phase shifting characteristic of preferably between 160° and 200° in relation to the openings (1), as well as a cross-section which is less than the limit dimension (31) for the printing of the projection device, so that the auxiliary openings (2) themselves cannot be printed onto the wafer. At the same time, however, they strengthen the contrast of the aerial image of an associated insulated or semi-insulated opening (1) on the wafer in particular. According to one form of embodiment, the distance of the auxiliary openings (2) from the opening (1) is greater than the resolution limit of the projection device, the opening being less than the coherence length of the light used for projection. The effect of the auxiliary openings consists of the phase-related use of the optical proximity effect. If the auxiliary openings (2) are arranged in a preferred direction, this effect can be used on quadratic openings (1) on the mask to produce elliptic structures (1') on a wafer. The result is a considerable widening of the process window for the projection of substrate contacting planes onto a wafer.

公开(公告)号：EP1244937A2

公开(公告)日：2002-10-02

申请号：EP00989795.0

申请日：2000-11-22

申请人： Infineon Technologies AG

发明人： FRIEDRICH, Christoph ,  HEISSMEIER, Michael ,  MOUKARA, Molela ,  GRIESINGER, Uwe ,  LUDWIG, Burkhard ,  PFORR, Rainer

IPC分类号： G03F1/00

CPC分类号： G03F1/30

摘要： The invention relates to an alternating phase mask (1) having a branched structure consisting of two opaque segments. Two transparent surfaces segments (5a, 5b) are arranged on both sides of said segments or the components thereof respectively. The surface segments are provided with phases that are displaced by 180 ° ± Δ α, whereby Δ α is not more than 25°. The surface segments (5a, 5b) are separated by at least one transparent surface boundary segment (6) whose phase is situated between the phases of the adjacent surface segments (5a, 5b).

公开(公告)号：EP1454193A2

公开(公告)日：2004-09-08

申请号：EP02805247.0

申请日：2002-11-25

申请人： Infineon Technologies AG

发明人： HENNIG, Mario ,  KÖHLE, Roderick ,  KUNKEL, Gerhard ,  PFORR, Rainer ,  VOIGT, Ina

IPC分类号： G03F1/00

CPC分类号： G03F1/30

摘要： The invention relates to a phase shifting mask (8) having symmetrical structures (1, 2) for the production of adjacent pairs (5) of structures (1', 2') on a semiconductor wafer (9), such as pairs of trench capacitors for memory modules, the structures (1, 2) inside the pair having a phase deviation difference of 180° in relation to each other. The dimensions of the structures at the limit of resolution of the lighting system enable the influence of lens aberrations on the difference in line width created between the right and the left to be reduced. The invention also relates to a method for producing the structures (1', 2') on the wafer (9), consisting of a step in which the phase attribution to the right structure (2) or left structure (1) is selected according to the sign of the difference in line width when said difference is measured without phase attribution, using the same lighting system.