公开(公告)号：EP4053887A1

公开(公告)日：2022-09-07

申请号：EP21160985.4

申请日：2021-03-05

申请人： Infineon Technologies AG

发明人： GRASSMANN, Andreas

IPC分类号： H01L21/56 ,  H01L23/31 ,  H01L25/07 ,  H01L23/373

摘要： A device for forming a housing for a power semiconductor module arrangement comprises a mold (80). The mold (80) comprises a first cavity (812) comprising a plurality of first openings (822) and a second opening (824), the second opening being coupled to a runner system (814), wherein the runner system (814) is configured to inject a mold material (90) into the first cavity (812) through the second opening (824). The device further comprises a plurality of sleeves or hollow bushings (82), wherein a first end (92) of each of the plurality of sleeves or hollow bushings (82) is arranged in one of the first openings (822), and wherein a second end of each of the plurality of sleeves or hollow bushings (82) extends to the outside of the mold (80), a heating element (84) configured to heat the mold (80), and a cooling element (86) configured to cool the plurality of sleeves or hollow bushings (82).

公开(公告)号：EP1221072A1

公开(公告)日：2002-07-10

申请号：EP99955723.4

申请日：1999-09-17

申请人： Infineon Technologies AG

发明人： GRASSMANN, Andreas ,  FRIEDRICH, Christoph ,  GRIESINGER, Uwe ,  PFORR, Rainer ,  WIDMANN, Dietrich

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： G03F1/34 ,  G03F7/2022

摘要： The invention relates to a phase mask for lithographically producing small structures at the border of a resolution that is provided by the wavelength of a radiation. The phase mask contains first areas (A) and second areas (B) which shift phases in relation to the first areas and are adjacent said first areas. Said areas serve for producing a sudden phase shift along the borders between the first and second areas. The inventive phase mask is characterised in that first areas contact each other over edges and at points (P) where second areas also contact each other over edges in such a way that borders between the first and second areas converge at said points which are impermeable for radiation. The invention enables the exposure of very small contact holes by means of only one exposure and thus results in reduced costs in the production of integrated semiconductor circuits.

公开(公告)号：EP1221072B1

公开(公告)日：2005-06-08

申请号：EP99955723.4

申请日：1999-09-17

申请人： Infineon Technologies AG

发明人： GRASSMANN, Andreas ,  FRIEDRICH, Christoph ,  GRIESINGER, Uwe ,  PFORR, Rainer ,  WIDMANN, Dietrich

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： G03F1/34 ,  G03F7/2022

摘要： The invention relates to a phase mask for lithographically producing small structures at the border of a resolution that is provided by the wavelength of a radiation. The phase mask contains first areas (A) and second areas (B) which shift phases in relation to the first areas and are adjacent said first areas. Said areas serve for producing a sudden phase shift along the borders between the first and second areas. The inventive phase mask is characterised in that first areas contact each other over edges and at points (P) where second areas also contact each other over edges in such a way that borders between the first and second areas converge at said points which are impermeable for radiation. The invention enables the exposure of very small contact holes by means of only one exposure and thus results in reduced costs in the production of integrated semiconductor circuits.

公开(公告)号：EP4372807A1

公开(公告)日：2024-05-22

申请号：EP22207915.4

申请日：2022-11-16

申请人： Infineon Technologies AG

发明人： BAYER, Christoph ,  FUEGL, Michael ,  SINGER, Frank ,  MEYER, Thorsten ,  CRAES, Fabian ,  GRASSMANN, Andreas ,  OTTO, Frederik

IPC分类号： H01L23/48 ,  H01L25/07 ,  H01L21/48 ,  H01L23/31 ,  H01L23/49 ,  H01L23/373

CPC分类号： H01L25/072 ,  H01L23/3735 ,  H01L23/49 ,  H01L2224/3222520130101 ,  H01L2224/3223820130101 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/8319220130101 ,  H01L2224/8319320130101 ,  H01L2224/7326520130101 ,  H01L2224/2900520130101 ,  H01L2224/2915720130101 ,  H01L2224/2914720130101 ,  H01L2224/2912420130101 ,  H01L2224/3201320130101 ,  H01L2224/4822720130101 ,  H01L24/83 ,  H01L21/4814 ,  H01L23/3121 ,  H01L2224/274520130101 ,  H01L2224/8320320130101 ,  H01L2224/2916320130101 ,  H01L23/49811 ,  H01L23/373 ,  H01L23/3736 ,  H01L23/24 ,  H01L23/053

摘要： A substrate arrangement comprises a first metallization layer (111), a plurality of nanowires (612) arranged on a surface of the first metallization layer (111), and at least one component (20, 4) arranged on the first metallization layer (111) such that a first subset of the plurality of nanowires (612) is arranged between the first metallization layer (111) and the at least one component (20, 4), wherein the plurality of nanowires (612) is evenly distributed over a section of the surface area or over the entire surface area of the first metallization layer (111), each of the plurality of nanowires (612) comprises a first end and a second end, wherein the first end of each of the plurality nanowires (612) is inseparably connected to the surface of the first metallization layer (111), the second end of each nanowire of the first subset is inseparably connected to a surface of one of the at least one component (20, 4) such that the first subset of nanowires (612) forms a permanent connection between the first metallization layer (111) and the at least one component (20, 4), the at least one component (20, 4) comprises at least one semiconductor body (20), and the number of nanowires (612) comprised in the first subset of nanowires (612) is less than the number of nanowires (612) comprised in the plurality of nanowires.