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公开(公告)号：EP1554738A1
公开(公告)日：2005-07-20
申请号：EP03773484.5
申请日：2003-10-02
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/265 , H01F41/30 , H01F41/308 , H01F41/34
摘要： The inventive element (R) composing an annular microstructure, in particular a thin single layer or multilayer circular film is formed on a substrate (S) which is used for a magnetoresistive memory. The inventive method consists in applying a masking layer to the substrate in such a way that the surface thereof is directly covered. An aperture (C) is produced by etching the masking layer in such a way that a partial area of said surface is uncovered. The etching is carried out in such a way that the aperture (C) is formed with a raised part (B) which protects at least partially the uncovered surface of an incident particle beam (TS). Said incident particle beam (TS) is oriented towards the substrate (S) at an inclined incidence angle ($g (a)). During said procedure, the substrate (S) rotates with respect to the particle beam (TS) oriented theretowards. Material is annularly deposed on the uncovered surface from said particle beam in such a way that a perforated microstructure element is formed.
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公开(公告)号：EP1466330A2
公开(公告)日：2004-10-13
申请号：EP03702435.3
申请日：2003-01-14
发明人： RABERG, Wolfgang
IPC分类号： G11C11/16
CPC分类号： G11C11/16
摘要： A resistive memory element (144), magnetic random access memory (MRAM) device, and methods of manufacturing thereof, wherein a thin oxide layer (132) is disposed within the first metal layer (136) of thememory element (144). The thin oxide layer (132) comprises an oxygen mono-layer. The roughness of subsequently-formed layers (134/118/116) is reduced, and magnetic capabilities of the resistive memory element (144) are enhanced by the use of the thin oxide layer (132) within the first metal layer (136).
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3.发明授权
公开(公告)号：EP1360692B1
公开(公告)日：2006-07-05
申请号：EP02701239.2
申请日：2002-01-24
CPC分类号： G11C11/1675
摘要： The invention relates to a method for writing in the magnetoresistive memory cells of a MRAM memory, wherein the write currents (I>WL BL WL BL
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4.发明公开NARROW CONDUCTOR DESIGN FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM) ARRAYS 审中-公开磁存取存储器（MRAM）狭窄的写作和阅读梯子
公开(公告)号：EP1476874A1
公开(公告)日：2004-11-17
申请号：EP03704638.0
申请日：2003-02-17
CPC分类号： G11C11/16 , H01L27/222 , Y10S977/943
摘要： An MRAM device (200) and method of manufacturing thereof having second conductive lines (228) with a narrow width. The second conductive lines (228) partially contact the resistive memory elements (214), reducing leakage currents in neighboring cells (214).
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5.发明公开
公开(公告)号：EP1360692A2
公开(公告)日：2003-11-12
申请号：EP02701239.2
申请日：2002-01-24
CPC分类号： G11C11/1675
摘要： The invention relates to a method for writing in the magnetoresistive memory cells of a MRAM memory, wherein the write currents (IWL, IBL) are applied respectively onto a word line (WL) and a bit line (BL), a superposition of the magnetic fields generated by the write currents in each memory cell selected by the corresponding word lines and bits lines altering the direction of the magnetisation thereof. According to the inventive method, the write currents (IWL, IBL) are applied in a chronologically offset manner, to the corresponding word line (WL) and the bit line (BL) whereby the direction of magnetisation of the selected memory cell is rotated in several consecutive steps (a - h) in the desired direction for writing a logical '0' or '1'.
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