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公开(公告)号：EP1466350A2
公开(公告)日：2004-10-13
申请号：EP03729432.9
申请日：2003-01-08
发明人： NAGEL, Nicolas , IMAI, Keitaro , BEITEL, Gerhard Adolf, , HILLIGER, Andreas , MOON, Bum-Ki , YAMAKAWA, Koji
IPC分类号： H01L21/02
CPC分类号： H01L27/11502 , H01L21/28568 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： An improved barrier stack (390) for inhibiting diffusion of atoms or molecules, such as O2 is disclosed. The barrier stack is particularly useful in capacitor over plug structures to prevent plug oxidation which can adversely impact the reliability of the structures. The barrier stack includes first and second barrier layers (347, 348) having mismatched grain boundaries. The barrier layers are selected from, for example, Ir, Ru, Pd, Rh, or alloys thereof. By providing mismatched grain boundaries, the interface of the layers block the diffusion path of oxygen. To further enhance the barrier properties, the first barrier layer is passivated with O2 using, for example, a rapid thermal oxidation. The RTO forms a thin oxide layer on the surface of the first barrier layer. The oxide layer can advantageously promote mismatching of the grain boundaries of the first and second barrier layer.
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公开(公告)号：EP1547092A1
公开(公告)日：2005-06-29
申请号：EP03797313.8
申请日：2003-09-19
发明人： HILLIGER, Andreas , JACOB, Michael , OZAKI, Toru , ROEHR, Thomas , SHUTO, Susumo
IPC分类号： G11C11/22 , H01L27/115
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/11507
摘要： An improved cell design for series memory architecture is disclosed. The improved cell design facilitates the formation of capacitors using a single etch process instead of two, as conventionally required. In one embodiment, each capacitor of a capacitor pair is provided with at least one plug contacting a common diffusion region of two adjacent cell transistors. In another embodiment, a large plug with sufficient overlap to the bottom electrodes of pair of capacitors is used.
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公开(公告)号：EP1543560A1
公开(公告)日：2005-06-22
申请号：EP03797235.3
申请日：2003-08-12
发明人： BEITEL, Gerhard , HILLIGER, Andreas , MOON, Bum-Ki , NAGEL, Nicolas , TSUCHIYA, Takamichi , YABUKI, Moto
IPC分类号： H01L27/115 , H01L21/8246
CPC分类号： H01L28/75 , H01L21/28568 , H01L28/60 , H01L28/90
摘要： A capacitor over plug (COP) structure is disclosed. The COP avoids the step which is created in conventional COP structures, which adversely impacts the properties of the capacitor. In one embodiment, the step is avoided by providing a plug having upper and lower portions. The upper portion, which is coupled to the bottom electrode of the capacitor, has substantially the same surface area as the bottom electrode. A barrier layer can be provided between the plug and bottom electrode to avoid oxidation of the plug material.
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公开(公告)号：EP1540711A2
公开(公告)日：2005-06-15
申请号：EP03797296.5
申请日：2003-09-11
IPC分类号： H01L21/02 , H01L27/115 , H01L21/8246
CPC分类号： H01L27/11502 , H01L21/76895 , H01L27/11507 , H01L28/60
摘要： A capacitor with improved reliability is disclosed. The capacitor includes a bottom electrode, a top electrode, and an intermediate layer therebetween. A contact, which is electrically coupled to the top electrode, is provided. At least a portion of the contact is offset from the capacitor. By offsetting the contact from the top electrode, the etch damage to the top electrode is reduced, thereby reducing or eliminating the need for the anneal to repair the etch damage.
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公开(公告)号：EP1579508A2
公开(公告)日：2005-09-28
申请号：EP03785898.2
申请日：2003-12-19
IPC分类号： H01L27/115 , G11C11/22 , H01L21/8246
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/10817 , H01L27/10852 , H01L27/11507
摘要： An IC with a memory array having a series architecture is disclosed. A memory cell of a series group comprises a transistor coupled to a capacitor in parallel. The capacitor includes first and second subcapacitors, one stacked one on top of the other. Providing a capacitor with two or more subcapacitors in a stack advantageously increases the capacitance of a capacitor without increasing surface area.
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公开(公告)号：EP1543560B1
公开(公告)日：2008-05-21
申请号：EP03797235.3
申请日：2003-08-12
发明人： BEITEL, Gerhard , HILLIGER, Andreas , MOON, Bum-Ki , NAGEL, Nicolas , TSUCHIYA, Takamichi , YABUKI, Moto
IPC分类号： H01L27/115 , H01L21/8246
CPC分类号： H01L28/75 , H01L21/28568 , H01L28/60 , H01L28/90
摘要： A capacitor over plug (COP) structure is disclosed. The COP avoids the step which is created in conventional COP structures, which adversely impacts the properties of the capacitor. In one embodiment, the step is avoided by providing a plug having upper and lower portions. The upper portion, which is coupled to the bottom electrode of the capacitor, has substantially the same surface area as the bottom electrode. A barrier layer can be provided between the plug and bottom electrode to avoid oxidation of the plug material.
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