专利检索 ap:("Infineon Technologies North America Corp.") AND inv:"RUF, Alexander" 第 1 页

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发明公开
INSITU DIFFUSION BARRIER AND COPPER METALLIZATION FOR IMPROVING RELIABILITY OF SEMICONDUCTOR DEVICES 审中-公开
标题翻译：原位扩散阻挡层和铜金属化，以提高半导体器件的可靠性

公开(公告)号：EP1292977A2

公开(公告)日：2003-03-19

申请号：EP01946617.6

申请日：2001-06-21

申请人： Infineon Technologies North America Corp.

发明人： WEBER, Stefan , RUF, Alexander , LIN, Chenting , KNORR, Andreas

IPC分类号： H01L21/768

CPC分类号： H01L21/76843 , H01L21/28568 , H01L21/76807 , H01L21/76871 , H01L21/76877

摘要： A method for forming metallizations for semiconductor devices, in accordance with the present invention, includes forming trenches (107) in a dielectric layer (104), depositing a single layer diffusion barrier (116) in the trenches, and without an air-brake, depositing a seed layer (118) of metal on the surface of the diffusion barrier. The trenches are then filled with metal (120). The metal adheres to the seed layer, which adheres to the diffusion barrier to provide many improvements in electrical characteristics as well as to reduce failures in the semiconductor devices.