公开(公告)号：EP3288061A1

公开(公告)日：2018-02-28

申请号：EP16461554.4

申请日：2016-08-24

Applicant: Instytut Technologii Materialów Elektronicznych

Inventor： Michalowski, Pawel ,  Strupinski, Wlodzimierz ,  Kaszub, Wawrzyniec

IPC: H01J49/14 ,  H01L21/00

CPC classification number: H01J49/142 ,  G01N23/2258

Abstract: The present invention is related to a method of analysing a solid substrate by means of Secondary lon Mass Spectroscopy (SIMS) comprising the steps of providing a graphene layer over the substrate surface, sputtering of the graphene-coated substrate in a dynamic mode (dSIMS), and detecting and analyzing ejected secondary anions by mass spectrometry analysis. The method according to the invention is useful for characterising surfaces, 2D materials, ultra-thin films, 2D and 3D imaging, depth profiling and concentration analysis, preferably for determining concentration of trace elements in a thin support.

Abstract translation: 本发明涉及一种借助次级质谱（SIMS）分析固体基质的方法，该方法包括以下步骤：在基质表面上提供石墨烯层，以动态模式溅射石墨烯涂布的基质（dSIMS） ，并通过质谱分析检测和分析喷出的二级阴离子。 根据本发明的方法可用于表征表面，2D材料，超薄膜，2D和3D成像，深度剖析和浓度分析，优选用于确定薄载体中微量元素的浓度。