专利检索 ap:("Intel Corporation") AND inv:"AKOLKAR, Rohan, N." 第 1 页

1.

发明公开
DUAL METAL INTERCONNECTS FOR IMPROVED GAP-FILL, RELIABILITY, AND REDUCED CAPACITANCE 审中-公开
标题翻译：用于改进间隙填充件，提高可靠性和降低产能翻一番金属

公开(公告)号：EP2356674A2

公开(公告)日：2011-08-17

申请号：EP09832386.8

申请日：2009-12-01

申请人： Intel Corporation

发明人： O'BRIEN, Kevin, P. , AKOLKAR, Rohan, N. , INDUKURI, Tejaswi , FAJARDO, Arnel M.

IPC分类号： H01L21/28 , H01L21/3205

CPC分类号： H01L21/76879 , H01L21/288 , H01L21/76877 , H01L23/5226 , H01L23/53214 , H01L23/53228 , H01L23/53242 , H01L23/53257 , H01L2924/0002 , H01L2924/00

摘要： Embodiments of apparatus and methods for forming dual metal interconnects are described herein. Other embodiments may be described and claimed.