公开(公告)号：EP3308403A1

公开(公告)日：2018-04-18

申请号：EP15895116.0

申请日：2015-06-12

申请人： Intel Corporation

发明人： GLASS, Glenn A. ,  MURTHY, Anand S. ,  KAM, Hei ,  GHANI, Tahir ,  JAMBUNATHAN, Karthik ,  MOHAPATRA, Chandra S.

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/6681 ,  H01L21/02532 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L21/8256 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/7848

摘要： Techniques are disclosed for forming transistors on the same substrate with varied channel materials. The techniques include forming a replacement material region in the substrate, such region used to form a plurality of fins therefrom, the fins used to form transistor channel regions. In an example case, the substrate may comprise Si and the replacement materials may include Ge, SiGe, and/or at least one III-V material. The replacement material regions can have a width sufficient to ensure a substantially planar interface between the replacement material and the substrate material. Therefore, the fins formed from the replacement material regions can also have a substantially planar interface between the replacement material and the substrate material. One example benefit from being able to form replacement material channel regions with such substantially planar interfaces can include at least a 30 percent improvement in current flow at a fixed voltage.