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    Semiconductor device with short-length electrode and fabrication process therefor
    1.
    发明公开
    Semiconductor device with short-length electrode and fabrication process therefor 失效
    具有短的长度的用于其制备的电极，和方法的半导体器件。

    公开(公告)号：EP0198446A2

    公开(公告)日：1986-10-22

    申请号：EP86105001.1

    申请日：1986-04-11

    申请人： International Business Machines Corporation

    发明人： Fang, Frank Fu ,  Grossman, Bertrand M.

    IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L29/10 ,  H01L29/60

    CPC分类号： H01L21/8236 ,  H01L21/0337 ,  H01L21/2815 ,  H01L29/4236 ,  H01L29/66477 ,  Y10S148/122

    摘要： A semiconductor device (Field Effect Transistor) is fabricated by coating a wafer with oxygen impervious silicon nitride and thereafter oxidising an exposed surface. By vertically etching the oxide layer by means of reactive ion etching, an oxide abutment or bird-beak (24) is formed with a perpendicular wall (40) and sloping roof (42). By depositing an electrically conductive conformal layer (46) of thickness equal to a desired electrode length and then vertically etching this conductive layer, an electrode (16) of short length is left on the perpendicular wall (40) of the abutment or bird-beak (24).
    I Source and drain regions (12 and 14) are formed by ion implantation adjacent the abutment or bird-beak (24) joined by a charge conduction channel - (50) which is partially constricted due to the doping profile produced by the varying thickness of the oxide layer to establish a predetermined resistance and protection from avalanche breakdown.

    摘要翻译： 一种半导体器件（场效应晶体管）是通过涂布有氮化氧不透硅晶片，然后在暴露的表面氧化来制造。 通过垂直地通过蚀刻氧化物上邻接或鸟嘴（24）反应性离子蚀刻的方式在氧化物层被形成为与垂直壁（40）和倾斜的屋顶（42）。 由厚度等于导电保形层（46）的沉积到期望的电极长度，然后垂直刻蚀短长度的电极（16）将该导电层留在邻接或鸟嘴的垂直壁（40） （24）。 ... 源和漏区（12和14），通过离子注入相邻地形成抵接或通过电荷导电沟道（50），所有这些是部分收缩的接合鸟嘴（24）由于由产生的掺杂分布 改变所述氧化物层的厚度以建立从雪崩击穿预定的电阻和保护。

    A method and system for facilitating the selection of icons
    5.
    发明公开
    A method and system for facilitating the selection of icons 失效
    Methode und System zur Erleichterung der Auswahl von Ikonen。

    公开(公告)号：EP0677803A3

    公开(公告)日：1997-03-05

    申请号：EP95102882.8

    申请日：1995-03-01

    申请人： International Business Machines Corporation

    发明人： Grossman, Bertrand M. ,  McLean, James Gordon ,  Pickover, Clifford A. ,  Schwartz, Michael Stephen ,  Winarski, Daniel James

    IPC分类号： G06F3/023 ,  G06F3/033

    CPC分类号： G06F3/04895 ,  G06F3/0481 ,  G06F3/04817 ,  G06F3/04842 ,  G06F3/04845 ,  Y10S715/977

    摘要： A method and system for facilitating the selection of icons. Those icons which are next likely to be used are selected and automatically moved towards a cursor thereby facilitating selection of the icons. Additionally, those icons likely to be used or other icons selected by a user may track the cursor such that those icons are always close to the cursor and capable of being easily selected. Further, in order to facilitate selection of icons, icons are provided with the capability of announcing themselves when a cursor comes close to the icon. In addition, it is possible to reduce the amount of clutter on a computer display so that icons may be easily selected. In order to clean up a computer display, icons which are least likely to be used are faded, eliminated or shrunk to a smaller size. In another embodiment, icons that are not used very often may disappear into a master icon and further, icons which have a conceptual relationship between them may be linked by a visual graphical representation.

    摘要翻译： 一种便于选择图标的方法和系统。 为了减少计算机显示器上的杂波量，可以容易地选择图标。 为了清理计算机显示器，最不可能使用的图标褪色，消除或缩小到较小的尺寸。 在另一个实施例中，经常不被使用的图标可能消失在主图标中，并且进一步地，它们之间具有概念关系的图标可以通过视觉图形表示来链接。

    Video display and control of multiple graphical interfaces
    6.
    发明公开
    Video display and control of multiple graphical interfaces 失效
    影视作品冯·梅伦

    公开(公告)号：EP0732647A1

    公开(公告)日：1996-09-18

    申请号：EP96102041.9

    申请日：1996-02-13

    申请人： International Business Machines Corporation

    发明人： Grossman, Bertrand M. ,  Pickover, Clifford A.

    IPC分类号： G06F3/033 ,  G06F3/14

    CPC分类号： G06F3/1438 ,  G09G2320/08 ,  G09G2340/04 ,  G09G2354/00 ,  H04N5/44 ,  H04N5/45 ,  H04N5/765 ,  H04N21/44213 ,  H04N21/4438 ,  H04N21/4532 ,  H04N21/482 ,  H04N21/4858

    摘要： This invention permits users to conveniently view and manipulate multiple windows, icons, or TV channel selections (appearing as a window on a TV monitor). These windows, icons, or TV channel selections can be conveniently moved between multiple monitors controlled by a single device such as a computer. The monitors may be cathode ray tubes (CRTs) or liquid crystal displays (LCDs). Inter-monitor movement is achieved using a "transport" region into which icons, windows, or TV channel selections are moved on a particular monitor. Once in this region, the icons, windows, or TV channel selections transport from the current monitor to a second monitor. In instances where a large number of icons are used, this is a means for consolidating, managing, and displaying them in an organized way.

    摘要翻译： 本发明允许用户方便地查看和操纵多个窗口，图标或电视频道选择（在TV监视器上显示为窗口）。 这些窗口，图标或电视频道选择可以方便地在由单个设备（如计算机）控制的多个显示器之间移动。 显示器可以是阴极射线管（CRT）或液晶显示器（LCD）。 使用在特定监视器上移动图标，窗口或电视频道选择的“传输”区域来实现监视间移动。 一旦在该区域，图标，窗口或电视频道选择从当前显示器传输到第二个监视器。 在使用大量图标的情况下，这是一种以有组织的方式整合，管理和显示图标的方法。

    A method of forming a semiconductor device using a mask
    8.
    发明公开
    A method of forming a semiconductor device using a mask 失效
    Verfahren zum Herstellen eines Halbleiterbauelementes mittels einer Maske。

    公开(公告)号：EP0179196A2

    公开(公告)日：1986-04-30

    申请号：EP85107231.4

    申请日：1985-06-13

    申请人： International Business Machines Corporation

    发明人： Fang, Frank Fu ,  Grossman, Bertrand M. ,  Hwang, Wei

    IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/265

    CPC分类号： H01L29/66659 ,  H01L21/0337 ,  H01L21/26586 ,  H01L21/2815 ,  H01L29/42376 ,  H01L29/66545 ,  Y10S148/082

    摘要： A semiconductor device, particularly an ultra-short gate MOSFET, is formed by depositing a mask (6) at a low angle with respect to a planar surface and then performing an angular conductivity conversion operation, such as ion implantation, so that the converted region extends (9) partially under the mask. The mask is then removed and a gate electrode (12) is deposited in its place, the gate being smaller than the channel length (11) from the source (7) to the point (9) where the conversion extended under the mask.
    Straggle location change is accommodated by arranging that the mask has a dimension along a line parallel to the planar surface which is greater than the desired channel length.

    摘要翻译： 通过相对于平面表面以低角度沉积掩模（6）并且然后执行诸如离子注入的角度电导率转换操作来形成半导体器件，特别是超短栅极MOSFET，使得转换区域 部分地在面罩下延伸（9）。 然后去除掩模，并且在其位置沉积栅电极（12），栅极小于从源（7）到在掩模下延伸的转换点（9）的沟道长度（11）。 通过布置掩模具有沿平行于平坦表面的线大于所需通道长度的尺寸来适应带状位置变化。