公开(公告)号：EP0425419A3

公开(公告)日：1991-11-21

申请号：EP90480151.1

申请日：1990-09-28

申请人： International Business Machines Corporation

发明人： Bennett, Reid Stuart ,  Ellingboe, Albert Rogers ,  Gifford, George Gordon ,  Singh, Jyothi ,  Haller, Kurt Lindsay ,  McKillop, John Slaton ,  Selwyn, Gary Stewart

IPC分类号： C23C16/50 ,  C23C16/54 ,  C23C14/56 ,  C23F4/00 ,  H01L21/00

CPC分类号： H01J37/32862 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/515 ,  H01J2237/022 ,  Y10S156/916

摘要： Contamination levels in plasma processes are reduced during plasma processing, by prevention of formation of particles, by preventing entry of particles externally introduced or by removing particles spontaneously formed from chemical and/or mechanical sources. Some techniques for prevention of formation of particles include interrup­tion of the plasma by pulsing the source of plasma energy periodically, or application of energy to provide mechani­cal agitation such as mechanical shockwaves, acoustic stress, ultrasonic stress, vibrational stress, thermal stress, and pressure stress. Following a period of ap­plied stress, a tool is pumped out (if a plasma is used, the glow is first discontinued), vented, opened and flaked or particulate material is cleaned from the lower elec­trode and other surfaces. A burst of filtered air or nitrogen, or a vacuum cleaner is used for removal of deposition debris while the vented tool is open. Follow­ing this procedure, the tool is then be used.for product runs. Alternatively, improvement of semiconductor process yields can be achieved by addition of reagents to getter chemical precursors of contamination particulates and by filtration of particulates from feedgas before plasma processing. The efficiency and endpoint for the applied stress are determined, by laser light scattering, using a pulsed or continuous laser source, e.g. a HeNe laser.

公开(公告)号：EP0425419A2

公开(公告)日：1991-05-02

申请号：EP90480151.1

申请日：1990-09-28

申请人： International Business Machines Corporation

发明人： Bennett, Reid Stuart ,  Ellingboe, Albert Rogers ,  Gifford, George Gordon ,  Singh, Jyothi ,  Haller, Kurt Lindsay ,  McKillop, John Slaton ,  Selwyn, Gary Stewart

IPC分类号： C23C16/50 ,  C23C16/54 ,  C23C14/56 ,  C23F4/00 ,  H01L21/00

CPC分类号： H01J37/32862 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/515 ,  H01J2237/022 ,  Y10S156/916

摘要： Contamination levels in plasma processes are reduced during plasma processing, by prevention of formation of particles, by preventing entry of particles externally introduced or by removing particles spontaneously formed from chemical and/or mechanical sources. Some techniques for prevention of formation of particles include interrup­tion of the plasma by pulsing the source of plasma energy periodically, or application of energy to provide mechani­cal agitation such as mechanical shockwaves, acoustic stress, ultrasonic stress, vibrational stress, thermal stress, and pressure stress. Following a period of ap­plied stress, a tool is pumped out (if a plasma is used, the glow is first discontinued), vented, opened and flaked or particulate material is cleaned from the lower elec­trode and other surfaces. A burst of filtered air or nitrogen, or a vacuum cleaner is used for removal of deposition debris while the vented tool is open. Follow­ing this procedure, the tool is then be used.for product runs. Alternatively, improvement of semiconductor process yields can be achieved by addition of reagents to getter chemical precursors of contamination particulates and by filtration of particulates from feedgas before plasma processing. The efficiency and endpoint for the applied stress are determined, by laser light scattering, using a pulsed or continuous laser source, e.g. a HeNe laser.

摘要翻译： 在等离子体处理期间，通过防止颗粒的形成，通过防止外部引入的颗粒进入或通过除去由化学和/或机械源自发形成的颗粒，等离子体处理中的污染水平降低。 用于防止颗粒形成的一些技术包括通过脉冲等离子体能量源周期性地中断等离子体，或施加能量以提供机械搅拌，例如机械冲击波，声应力，超声应力，振动应力，热应力和压力应力 。 经过一段时间的施加应力，泵出一个工具（如果使用等离子体，则首先停止发光），从下部电极和其他表面清除通风，打开和剥落或颗粒物质。 过滤的空气或氮气的爆裂或真空吸尘器用于在通风工具打开时去除沉积物。 按照此过程，然后使用该工具进行产品运行。 或者，半导体工艺产量的改善可以通过添加试剂来吸收污染物颗粒的化学前体和通过在等离子体处理之前从原料气中过滤颗粒来实现。 通过激光散射来确定所施加的应力的效率和终点，使用脉冲或连续激光源，例如， HeNe激光。