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    PLASMA ACTIVATED CHEMICAL VAPOUR DEPOSITION METHOD AND APPARATUS THEREFOR
    3.
    发明公开
    PLASMA ACTIVATED CHEMICAL VAPOUR DEPOSITION METHOD AND APPARATUS THEREFOR 审中-公开
    方法等离子体激活CVD及其装置的

    公开(公告)号：EP2229466A4

    公开(公告)日：2015-11-04

    申请号：EP08860425

    申请日：2008-12-12

    申请人： PLASMATRIX MATERIALS AB

    发明人： NICOLESCU MIHAI ,  HJALMARSSON ÄKE ,  KOUZNETSOV KLIM

    IPC分类号： C23C16/515 ,  C23C14/22 ,  C23C14/34 ,  C23C16/44 ,  C23C16/52 ,  H01J37/32 ,  H01J37/34

    CPC分类号： H01J37/32174 ,  C23C14/22 ,  C23C14/3485 ,  C23C16/44 ,  C23C16/515 ,  H01J37/32091 ,  H01J37/32559 ,  H01J37/3467 ,  H01J2237/3321

    摘要： In plasma activated chemical vapour deposition a plasma decomposition unit is used that is arranged in or connected to a vacuum vessel having a relatively low pressure or vacuum, to which an operating gas is provided. Periodically repeated voltage pulses are applied between the anode and the cathode of the plasma decomposition unit in such a manner that pulsed electric discharges are produced between the cathode and the surrounding anode of the plasma decomposition unit. The anode is arranged in a special way so that at least a portion thereof will obtain only an electrically conductive coating or substantially no coating when operating the unit. For that purpose, the anode includes a portion located in the direct vicinity of the free surface of the cathode. The portion is a flange or edge portion which is located or extends over margins of the free surface of the cathode. In that way, the anode will include a portion that is shielded for direct coating with particles from the plasma formed and that hence will obtain e.g. substantially no dielectric coating at all.

    PULSED PLASMA DEPOSITION DEVICE
    4.
    发明公开
    PULSED PLASMA DEPOSITION DEVICE 有权
    DEVICE对于脉冲等离子涂层

    公开(公告)号：EP2936538A1

    公开(公告)日：2015-10-28

    申请号：EP13826886.7

    申请日：2013-12-20

    申请人： Organic Spintronics S.R.L.

    发明人： YARMOLICH, Dmitry ,  TALIANI, Carlo

    IPC分类号： H01J37/077 ,  H01J37/305

    CPC分类号： C23C16/515 ,  C23C16/487 ,  H01J3/025 ,  H01J37/077 ,  H01J37/30 ,  H01J37/3053 ,  H01J37/32532 ,  H01J2237/06375 ,  H01J2237/151 ,  H01J2237/3132

    摘要： A pulsed plasma deposition device, comprising an apparatus for generating a beam of electrons (3), a target (4) and a substrate (6), the apparatus (3) being suitable for generating a pulsed beam of electrons directed towards said target (4) to determine the ablation of the material of said target (4) in the form of a plasma plume (19) directed towards said substrate (6); the device comprises a transportation and focussing group (13) of the beam of electrons towards said target (4), arranged between said apparatus (3) and said target (4) and comprising a transportation cone (14), the transportation and focussing group (13) also comprising a focussing electrode (15) directly connected to the transportation cone (14) and shaped substantially like a loop; the axis of symmetry (16) of the focussing electrode (15) is perpendicular, or substantially perpendicular, to the surface of the target (4).

    METHOD FOR MANUFACTURING ELECTROPHOTOGRAPHIC RECEPTOR
    7.
    发明公开
    METHOD FOR MANUFACTURING ELECTROPHOTOGRAPHIC RECEPTOR 审中-公开
    VERFAHREN ZUR HERSTELLUNG EINES ELEKTROPHOTOGRAPHISCHEN REZEPTORS

    公开(公告)号：EP2757418A1

    公开(公告)日：2014-07-23

    申请号：EP11872526.6

    申请日：2011-09-12

    申请人： Canon Kabushiki Kaisha

    发明人： KOJIMA Satoshi ,  OOYAMA Kazunari ,  ABE Yukihiro

    IPC分类号： G03G5/00

    CPC分类号： G03G5/0433 ,  C23C16/24 ,  C23C16/325 ,  C23C16/515 ,  G03G5/08214 ,  G03G5/08278 ,  H01J37/32018 ,  H01J37/32036 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32715

    摘要： A method for manufacturing an electrophotographic photosensitive member is provided, wherein high levels of prevention of charge-up and prevention of secondary reactions are achieved.
    In the manufacturing of an electrophotographic photosensitive member by applying an alternating voltage of a rectangular wave having a frequency of 3 kHz or more and 300 kHz or less between an electrode and a cylindrical base member so that the potential at one of the electrode and the cylindrical base member with respect to the potential at the other becomes alternately positive and negative, to decompose a raw material gas, and forming a deposited film on the cylindrical base member, one of the absolute value of the potential difference between the electrode and the cylindrical base member when a potential at one of the electrode and the cylindrical base member with respect to a potential at the other becomes positive and the absolute value of the potential difference between the electrode and the cylindrical base member when a potential at one of the electrode and the cylindrical base member with respect to a potential at the other becomes negative is a value less than the absolute value of a discharge maintaining voltage, and the other is a value greater than or equal to the absolute value of a discharge starting voltage.

    摘要翻译： 提供了一种用于制造电子照相感光构件的方法，其中实现了高水平的防止充电和防止二次反应。 在通过在电极和圆筒形基底构件之间施加频率为3kHz以上且300kHz以下的矩形波的交流电压来制造电子照相感光构件，使得电极和圆柱体之一处的电位 相对于另一方的电位的基材成为交替的正负，分解原料气体，并且在圆筒形基材上形成沉积膜，电极和圆筒形基体之间的电位差的绝对值之一 当电极和圆筒形基底中的一个相对于另一个电位的电位变为正时的电位和电极和圆筒形基体之间的电位差的绝对值，当电极和电极之间的电位 相对于另一方的电位的圆柱形基底成​​为负值是小于绝对值的值 放电维持电压的值，另一个是大于或等于放电起始电压的绝对值的值。

    VERFAHREN ZUR PLASMABEHANDLUNG VON WERKSTÜCKEN SOWIE WERKSTÜCK MIT GASBARRIERESCHICHT
    8.
    发明公开
    VERFAHREN ZUR PLASMABEHANDLUNG VON WERKSTÜCKEN SOWIE WERKSTÜCK MIT GASBARRIERESCHICHT 有权
    VERFAHREN ZUR PLASMABEHANDLUNG VONWERKSTÜCKEN

    公开(公告)号：EP2721192A1

    公开(公告)日：2014-04-23

    申请号：EP12731299.9

    申请日：2012-06-15

    申请人： KHS Corpoplast GmbH

    发明人： SIEBELS, Sönke ,  HERBORT, Michael

    IPC分类号： C23C16/04 ,  C23C16/40 ,  C23C16/511 ,  C23C16/515

    CPC分类号： B65D25/14 ,  B65D25/34 ,  C23C16/045 ,  C23C16/401 ,  C23C16/511 ,  C23C16/515 ,  Y10T428/1379

    摘要： The method serves for the plasma treatment of container-like workpieces. The workpiece is inserted into an at least partially evacuable chamber of a treatment station. The plasma chamber is bounded by a chamber base, a chamber cover and a lateral chamber wall. The plasma treatment causes a coating to be deposited on the workpiece. The plasma is ignited by microwave energy. The coating consists at least of a gas barrier layer and a bonding layer arranged between the workpiece and the gas barrier layer. The gas barrier layer contains SiOx and the bonding layer contains carbon. The gas barrier layer is produced from a gas that contains at least one silicon compound and argon.

    摘要翻译： 该方法用于容器状工件的等离子体处理。 工件被插入到处理台的至少部分可抽空的室中。 等离子体室由腔室基座，腔室盖和侧壁室限定。 等离子体处理导致涂层沉积在工件上。 等离子体被微波能量点燃。 该涂层至少包括阻气层和布置在工件和阻气层之间的粘合层。 阻气层含有SiO x，结合层含有碳。 阻气层由含有至少一种硅化合物和氩的气体制成。

    THIN FILM FORMATION DEVICE AND SEMICONDUCTOR FILM MANUFACTURING METHOD
    9.
    发明公开
    THIN FILM FORMATION DEVICE AND SEMICONDUCTOR FILM MANUFACTURING METHOD 有权
    薄膜形成装置及半导体薄膜的制造方法

    公开(公告)号：EP2284869A4

    公开(公告)日：2014-01-29

    申请号：EP09754576

    申请日：2009-05-14

    申请人： MITSUBISHI ELECTRIC CORP

    发明人： TSUDA MUTSUMI ,  TAKI MASAKAZU

    IPC分类号： H01L21/205 ,  C23C16/24 ,  C23C16/455 ,  C23C16/515 ,  H01L31/04

    CPC分类号： H01L21/0262 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/515 ,  H01L21/02532 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

    摘要： Included are a vacuum chamber 10 having a substrate stage 12 that holds a substrate 100 and a plasma electrode 13 that is provided so as to face the substrate 100, a H 2 gas supply unit that supplies a H 2 gas to the vacuum chamber 10 at a constant flow rate during deposition, a SiH 4 gas supply unit that opens or closes a gas valve 25 to turn on or off the supply of a SiH 4 gas to the vacuum chamber 10 during deposition, a high-frequency power source 40 that applies a high frequency voltage to the plasma electrode 13, a shield box 20 that is connected to the ground so as to surround the plasma electrode 13 outside the vacuum chamber 10, and a control unit 60 that controls the opening or closing of the gas valve 25 such that the SiH 4 gas is periodically supplied to the vacuum chamber 10 and modulates the amplitude of high frequency power supplied to the plasma electrode 13 in synchronization with the opening or closing of the gas valve 25, and the gas valve 25 is provided in the shield box 20.