公开(公告)号：EP0543158A2

公开(公告)日：1993-05-26

申请号：EP92117856.2

申请日：1992-10-19

申请人： International Business Machines Corporation

发明人： Lam, Chung Hon ,  Lasky, Jerome Brett ,  Hill, Craig Marshall ,  Nakos, James Spiros ,  Holmes, Steven John ,  Geissler, Stephen Frank ,  Lord, David Kennedy

IPC分类号： H01L21/90

CPC分类号： H01L21/32134 ,  H01L21/768

摘要： The invention provides a method for electrically connecting a polysilicon-filled trench (12) to a diffusion region (10) in a semiconductor device, wherein the trench (12) and diffusion region (10) are separated by a dielectric (14). The method provides for formation of a strap or bridge contact by utilizing a diffusion barrier layer (18) which prevents diffusion into an overlying polysilicon layer (32) when a subsequent boron (16) out-diffusion step is performed. Selective etching is then utilized to remove the polysilicon layer (32) where no boron has diffused, leaving a polysilicon strap connecting the trench and diffusion region.

摘要翻译： 本发明提供了一种用于将多晶硅填充的沟槽（12）电连接到半导体器件中的扩散区（10）的方法，其中沟槽（12）和扩散区（10）由电介质（14）分开。 该方法通过利用当执行随后的硼（16）扩散步骤时阻止扩散到上覆多晶硅层（32）中的扩散阻挡层（18）来形成带或桥接触。 然后利用选择性蚀刻来除去其中没有硼扩散的多晶硅层（32），留下连接沟槽和扩散区域的多晶硅条带。

公开(公告)号：EP0543158A3

公开(公告)日：1993-12-29

申请号：EP92117856.2

申请日：1992-10-19

申请人： International Business Machines Corporation

发明人： Lam, Chung Hon ,  Lasky, Jerome Brett ,  Hill, Craig Marshall ,  Nakos, James Spiros ,  Holmes, Steven John ,  Geissler, Stephen Frank ,  Lord, David Kennedy

IPC分类号： H01L21/90

CPC分类号： H01L21/32134 ,  H01L21/768

摘要： The invention provides a method for electrically connecting a polysilicon-filled trench (12) to a diffusion region (10) in a semiconductor device, wherein the trench (12) and diffusion region (10) are separated by a dielectric (14). The method provides for formation of a strap or bridge contact by utilizing a diffusion barrier layer (18) which prevents diffusion into an overlying polysilicon layer (32) when a subsequent boron (16) out-diffusion step is performed. Selective etching is then utilized to remove the polysilicon layer (32) where no boron has diffused, leaving a polysilicon strap connecting the trench and diffusion region.