High-power semiconductor diode laser
    1.
    发明公开
    High-power semiconductor diode laser 失效
    Hochenergie-Halbleiter-Diodenlaser。

    公开(公告)号:EP0332723A1

    公开(公告)日:1989-09-20

    申请号:EP88104096.8

    申请日:1988-03-15

    IPC分类号: H01S3/19 H01S3/08

    CPC分类号: B82Y20/00 H01S5/16 H01S5/3432

    摘要: The segmented waveguide diode laser structure has non-­absorbing mirror sections (14M) that allow high power output without facet damage. Light generated in the active laser section (12A) is coupled into the mirror sections (14 M) where it is fully guided when propagating towards the reflecting mirror facets (18).
    In one embodiment, the laser structure is formed on a patterned substrate (10) having planar mesa- (10A) and groove- (10M) sections, with sloped transition zones (10T) inbetween. It comprises an active (WG1) and a passive (WG2) waveguide. These are vertically stacked, parallel to the substrate surface, and separated from each other by a cladding layer(13). The gain segment (12A) of the active waveguide (WG1) is aligned with the non-absorbing mirror sections (14M) of the passive waveguide (WG2).

    摘要翻译: 分段波导二极管激光器结构具有非吸收镜部分(14M),其允许高功率输出而没有小面损伤。 在有源激光器部分(12A)中产生的光耦合到反射镜部分(14M)中,在反射镜面(18)传播时被完全引导。 在一个实施例中,激光器结构形成在具有平面台面(10A)和槽 - (10M)部分的图案化衬底(10)上,其间具有倾斜的过渡区(10T)。 它包括有源(WG1)和无源(WG2)波导。 它们垂直堆叠,平行于衬底表面,并通过包覆层(13)彼此分离。 有源波导(WG1)的增益段(12A)与无源波导(WG2)的非吸收镜部分(14M)对准。