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公开(公告)号：EP0332723A1
公开(公告)日：1989-09-20
申请号：EP88104096.8
申请日：1988-03-15
发明人： Bächtold, Werner , Broom, Ronald F. , Harder, Stephan Christoph , Jäckel, Heinz , Meier, Peter Heinz , Walter, Willi
CPC分类号： B82Y20/00 , H01S5/16 , H01S5/3432
摘要： The segmented waveguide diode laser structure has non-absorbing mirror sections (14M) that allow high power output without facet damage. Light generated in the active laser section (12A) is coupled into the mirror sections (14 M) where it is fully guided when propagating towards the reflecting mirror facets (18).
In one embodiment, the laser structure is formed on a patterned substrate (10) having planar mesa- (10A) and groove- (10M) sections, with sloped transition zones (10T) inbetween. It comprises an active (WG1) and a passive (WG2) waveguide. These are vertically stacked, parallel to the substrate surface, and separated from each other by a cladding layer(13). The gain segment (12A) of the active waveguide (WG1) is aligned with the non-absorbing mirror sections (14M) of the passive waveguide (WG2).摘要翻译： 分段波导二极管激光器结构具有非吸收镜部分（14M），其允许高功率输出而没有小面损伤。 在有源激光器部分（12A）中产生的光耦合到反射镜部分（14M）中，在反射镜面（18）传播时被完全引导。 在一个实施例中，激光器结构形成在具有平面台面（10A）和槽 - （10M）部分的图案化衬底（10）上，其间具有倾斜的过渡区（10T）。 它包括有源（WG1）和无源（WG2）波导。 它们垂直堆叠，平行于衬底表面，并通过包覆层（13）彼此分离。 有源波导（WG1）的增益段（12A）与无源波导（WG2）的非吸收镜部分（14M）对准。
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公开(公告)号：EP0348540A1
公开(公告)日：1990-01-03
申请号：EP88110302.2
申请日：1988-06-28
CPC分类号： H01S5/227 , H01L33/0062 , H01S5/2235 , H01S5/2237 , H01S5/3203
摘要： The process is particularly useful in the fabrication of GaAs quantum well (QW) laser diodes. Starting point is a ridge-patterned (100)-substrate (21), the crystal orientation of the sidewalls, e.g., (411A)-oriented, being different from that of the horizontal top. The sidewall facets thus have a lower Ga incorporation rate.
In a molecular beam epitaxy (MBE) system, the lower AlGaAs cladding layer (22) is first grown, followed by the high-temperature growth of the active GaAs QW (23). Due to diffusion and desorption processes, the GaAs thickness at the sidewalls (23E) is smaller than on the horizontal top (23R) of the ridge. During a short growth interrupt, the GaAs completely desorps from the sidewall facets. With the subsequent growth of the upper cladding layer (24), the QW becomes laterally embedded in higher bandgap material providing for lateral electric confinement.摘要翻译： 该方法在制造GaAs量子阱（QW）激光二极管中特别有用。 起始点是脊形图案（100）衬底（21），侧壁的晶体取向（例如（411A））取向不同于水平顶部。 因此，侧壁面具有较低的Ga掺入率。 在分子束外延（MBE）系统中，首先生长下部AlGaAs覆层（22），随后激活有源GaAs QW（23）的高温生长。 由于扩散和解吸过程，侧壁（23E）处的GaAs厚度小于脊的水平顶部（23R）。 在短暂的增长中断期间，GaAs完全从侧壁面解吸。 随着上覆层（24）的随后生长，QW横向地嵌入到提供横向电限制的较高带隙材料中。
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公开(公告)号：EP0348540B1
公开(公告)日：1993-01-20
申请号：EP88110302.2
申请日：1988-06-28
CPC分类号： H01S5/227 , H01L33/0062 , H01S5/2235 , H01S5/2237 , H01S5/3203
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4.发明公开Opto-electronic light emitting semiconductor device 失效Optoelektronisches lichtemittierendes Halbleiterbauelement。
公开(公告)号：EP0406506A1
公开(公告)日：1991-01-09
申请号：EP89810515.0
申请日：1989-07-07
发明人： Harder, Christoph Stephan, Dr. , Meier, Heinz Peter, Dr. , Van Zeghbroeck, Bart Jozef , Walter, Willi
CPC分类号： H01S5/028 , H01L27/15 , H01L31/173 , H01S5/0264
摘要： Opto-electronic light emitting device (30) epitaxially grown in III-V technology. It consists of a light emitting element (10), such as a diode laser or a LED, arranged back-to-back on a pn-junction diode (35), e.g., a PIN diode structure. A common middle layer (33) is transparent for the emitted wavelength and allows strong optical coupling (of at least 50 %) of the spontaneous isotropic radiation emitted by the light emitting element (10) to the diode (35) where the light is absorbed and recuperated for feedback to the light emitting element. The diode can be operated either as a photodiode or as a solar cell (by applying either a reverse- or a forward-bias voltage) resulting in regaining of either current or energy.
摘要翻译： 在III-V技术中外延生长的光电子发光器件（30）。 它由例如PIN二极管结构在pn结二极管（35）上背对背地布置的诸如二极管激光器或LED的发光元件（10）组成。 公共中间层（33）对于所发射的波长是透明的，并且允许由发光元件（10）发射到二极管（35）的自发各向同性辐射的强耦合（至少50％），其中光被吸收 并且恢复以用于反馈到发光元件。 二极管可以作为光电二极管或太阳能电池（通过施加反向或正向偏置电压）来操作，导致电流或能量的恢复。
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