Multiple data surface optical medium and storage system
    6.
    发明公开
    Multiple data surface optical medium and storage system 失效
    Optisches Medium mitMehrfachdatenoberflächeund Speichersystem。

    公开(公告)号:EP0635825A1

    公开(公告)日:1995-01-25

    申请号:EP94304677.1

    申请日:1994-06-27

    IPC分类号: G11B7/24 G11B7/00

    CPC分类号: G11B7/24 G11B7/0052

    摘要: An optical data storage system uses an optical medium 12 made of a stack of spaced-apart optical disks 50, 60, 70, 80. Each disk in the stack is made of light-transmissive material, such as polycarbonate when the system is a CD-ROM system, and has a partially light-transmissive data layer on at least one of its faces. A focusing lens 210 in the system focuses light to the data layers along optical paths, with each data layer corresponding to a unique optical path length. The light is focused to each data layer by reflection off adjacent data layers such that the total substrate thickness through which the light passes is the same for each optical path. In this manner, the fixed spherical aberration correction provided by the focusing lens is adequate and variable aberration correction is not necessary. By appropriate selection of reflectivities of the multiple data layers in the disk stack, it is possible to design the system so that the effective reflected light intensity from each data layer is the same, and that adjustable signal amplification is not necessary.

    摘要翻译: 光学数据存储系统包括光学介质,其包括具有相同材料厚度的两个间隔开的基板,每个基板具有数据层。 至少一个基板具有至少部分透射的数据层。 光源位于第一基板附近。 设备将来自源的光引导到介质,并且包括用于将光聚焦到离散数量的聚焦位置的装置。 每个位置限定了光源和相应的一个数据层之间的光路。 两个光路中的每一个包括具有等于三个基板厚度的总厚度的通过基板材料的通道。

    Data storage using state transformable materials
    9.
    发明公开
    Data storage using state transformable materials 失效
    使用状态可变材料的数据存储

    公开(公告)号:EP0335487A3

    公开(公告)日:1991-09-25

    申请号:EP89301413.4

    申请日:1989-02-15

    IPC分类号: G11B9/00

    摘要: A method for recording, reading and erasing data bits in a data storage device is described. Using extended scanning tunnelling microscopy (STM) techniques, a tunnelling electron current by resistive heating selectively melts discrete areas of a state-transformable film; then heat is dissipated rapidly, writing data bits by changing the film in the areas from a first state to a second state wherein an electronic property, such as conductance, work function or band gap, in the areas is changed. Again, using extended STM techniques, the effect of this changed electronic property of the film on the tunnelling current is measured for reading the written data bits. Minimising the effect of blemishes on the material is effected, during operation in STM constant current mode by measuring dI/dV or dI/ds, and during operation in STM variable current (constant gap) mode by measuring (dI/dV)/I or (dI/ds)/I. Also, by using extended STM techniques, data bits can be selectively erased by resistance heating the film to a temperature higher than the crystallisation temperature for a sufficient period of time, restoring selected discrete areas to the first state and each affected electronic property substantially to its original condition.