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公开(公告)号：EP0592094A3
公开(公告)日：1994-10-12
申请号：EP93306702.7
申请日：1993-08-24
发明人： Fan, Long-Shen , Zappe, Hans Helmut
CPC分类号： G03F7/11 , B81B2201/035 , B81B2201/037 , B81C99/0085 , G03F7/00 , H02N1/008
摘要： In the fabrication of a free-standing miniaturized structure in a range of about 10 to 20 µm thick, a method based on a sacrificial system includes the steps of selecting a substrate material, depositing on the substrate material a sacrificial layer 58 of material and patterning the sacrificial layer to define a shape. A photoresist layer 62 of material is deposited on the sacrificial layer and patterned by contrast-enhanced photolithography to form a photoresist mould. Upon the mould there is plated a metallic layer 68 of material. The electroplated structure conforms to the resist profile and can have a thickness many times that of conventional polysilicon microstructures. The photoresist mould and the sacrificial layer are thereafter dissolved using etchants to form a free standing metallic structure in a range of about 10 to 20 µm thick, with vertical to lateral aspect ratios of 9:1 to 10:1 or more.
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公开(公告)号：EP0592094B1
公开(公告)日：1999-02-03
申请号：EP93306702.7
申请日：1993-08-24
发明人： Fan, Long-Shen , Zappe, Hans Helmut
CPC分类号： G03F7/11 , B81B2201/035 , B81B2201/037 , B81C99/0085 , G03F7/00 , H02N1/008
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公开(公告)号：EP0592094A2
公开(公告)日：1994-04-13
申请号：EP93306702.7
申请日：1993-08-24
发明人： Fan, Long-Shen , Zappe, Hans Helmut
CPC分类号： G03F7/11 , B81B2201/035 , B81B2201/037 , B81C99/0085 , G03F7/00 , H02N1/008
摘要： In the fabrication of a free-standing miniaturized structure in a range of about 10 to 20 µm thick, a method based on a sacrificial system includes the steps of selecting a substrate material, depositing on the substrate material a sacrificial layer 58 of material and patterning the sacrificial layer to define a shape. A photoresist layer 62 of material is deposited on the sacrificial layer and patterned by contrast-enhanced photolithography to form a photoresist mould. Upon the mould there is plated a metallic layer 68 of material. The electroplated structure conforms to the resist profile and can have a thickness many times that of conventional polysilicon microstructures. The photoresist mould and the sacrificial layer are thereafter dissolved using etchants to form a free standing metallic structure in a range of about 10 to 20 µm thick, with vertical to lateral aspect ratios of 9:1 to 10:1 or more.
摘要翻译： 在制造约10至20μm厚的自立式小型化结构中，基于牺牲系统的方法包括以下步骤：选择衬底材料，在衬底材料上沉积材料的牺牲层58并图案化 牺牲层来定义一个形状。 将材料的光致抗蚀剂层62沉积在牺牲层上并且通过对比增强的光刻来图案化以形成光刻胶模具。 在模具上镀上一层金属材料层68。 电镀结构符合抗蚀剂轮廓并且可以具有传统多晶硅微结构的多倍。 之后使用蚀刻剂溶解光致抗蚀剂模具和牺牲层以形成约10至20μm厚的独立式金属结构，垂直横向长宽比为9：1至10：1或更大。
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