公开(公告)号：EP0400263B1

公开(公告)日：1994-05-11

申请号：EP90100486.1

申请日：1990-01-11

申请人： International Business Machines Corporation

发明人： Chang, Leroy L. ,  Esaki, Leo ,  Munekata, Hiro ,  Ohno, Hideo ,  von Molnar, Stephan

IPC分类号： H01F1/00 ,  C30B23/02 ,  C30B29/40

CPC分类号： C30B23/02 ,  C30B29/40 ,  H01F1/401 ,  H01F1/404 ,  H01F1/405 ,  H01F41/14 ,  H01L43/10 ,  Y10S438/918

公开(公告)号：EP0400263A1

公开(公告)日：1990-12-05

申请号：EP90100486.1

申请日：1990-01-11

申请人： International Business Machines Corporation

发明人： Chang, Leroy L. ,  Esaki, Leo ,  Munekata, Hiro ,  Ohno, Hideo ,  von Molnar, Stephan

IPC分类号： H01F1/00 ,  C30B23/02 ,  C30B29/40

CPC分类号： C30B23/02 ,  C30B29/40 ,  H01F1/401 ,  H01F1/404 ,  H01F1/405 ,  H01F41/14 ,  H01L43/10 ,  Y10S438/918

摘要： A new semiconductor material or compound and method for its manufacture is disclosed. The material or compound has the Formula III-V or IV which includes as part of the compound, a transition element or a rare earth element present in an amount sufficient to change the material or compound from a paramagnetic state to a locally ordered magnetic state. The material or compound is made by depositing III, and V or IV and a transition element or a rare earth element onto a substrate at conditions such that the transition element or rare earth element that is deposited on the substrate is not in equilibrium with the material or compound. By employing this technique new semicon­ductor materials or compounds can be made including Ga 1-x Mn x As and In 1-x Mn x As where Mn is present in an amount greater than about 10²⁰ cm⁻³.

摘要翻译： 公开了一种新的半导体材料或其制造方法。 该材料或化合物具有式III-V或IV，其包括作为化合物的一部分的过渡元素或稀土元素，其量足以将材料或化合物从顺磁性状态改变为局部有序的磁状态。 材料或化合物是通过将III和V或IV和过渡元素或稀土元素沉积在基底上而使沉积在基底上的过渡元素或稀土元素不与材料平衡的条件下制备的 或化合物。 通过采用这种技术，可以制备新的半导体材料或化合物，其包括Ga1-xMnxAs和In1-xMnxAs，其中Mn以大于约10 -2 cm -3的量存在。