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    Optoelectronic devices
    1.
    发明公开
    Optoelectronic devices 失效
    Optoelektronische Vorrichtungen。

    公开(公告)号：EP0433542A2

    公开(公告)日：1991-06-26

    申请号：EP90114315.6

    申请日：1990-07-26

    申请人： International Business Machines Corporation

    发明人： Esaki, Leo ,  Ohno, Hideo ,  Mendez, Emilio Eugenio

    IPC分类号： H01L33/00 ,  H01L31/0352 ,  H01S3/19

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L31/0352 ,  H01S5/06203 ,  H01S5/06206 ,  H01S5/34 ,  H01S5/3402 ,  H01S5/3418 ,  H01S5/3419 ,  H01S5/3422 ,  H01S5/34306

    摘要： The present invention is directed to novel optoelectronic devices, such as light emitters and detectors, that have a unique combination of semiconductor materials that provides a band arrangement resulting in improved efficiency of carrier injection. The devices are quantum well type devices in which discrete electronic states are formed by size quantization effects in the quantum well region. Electromagnetic radiation of emission and absorption occurs by the transition of electrons from a first energy state to a second energy state in either the conduction band or the valence band of the quantum well layer (12). The bands edges of the layers are offset such that under an appropriate bias, the discrete energy states reside in the bandgap of one of the electrodes (14) and in an allowed region of the other electrode (16), with one state residing in the conduction band of one electrode and the other state residing in the valence band of the other electrode. The wavelength of the emitted or detected light is inversely proportional to the energy difference between the first and second states. Wavelength customization is facilitated by techniques for adjusting the energy difference.

    摘要翻译： 本发明涉及新型光电器件，例如发光体和检测器，其具有提供带状布置的半导体材料的独特组合，从而提高载流子注入的效率。 这些器件是量子阱型器件，其中通过量子阱区域中的尺寸量化效应形成分立的电子状态。 发射和吸收的电磁辐射通过电子从量子阱层（12）的导带或价带中的第一能态转变为第二能态而发生。 这些层的带边缘被偏移，使得在适当的偏压下，离散能态驻留在电极（14）之一和另一电极（16）的允许区域的带隙中，一个状态驻留在 一个电极的导带和另一个电极的价带中的另一个状态。 发射或检测到的光的波长与第一和第二状态之间的能量差成反比。 通过调整能量差异的技术来促进波长定制。

    New class of magnetic materials for solid state devices
    2.
    发明公开
    New class of magnetic materials for solid state devices 失效
    Magnetische MaterialienfürFestkörpervorrichtungen。

    公开(公告)号：EP0400263A1

    公开(公告)日：1990-12-05

    申请号：EP90100486.1

    申请日：1990-01-11

    申请人： International Business Machines Corporation

    发明人： Chang, Leroy L. ,  Esaki, Leo ,  Munekata, Hiro ,  Ohno, Hideo ,  von Molnar, Stephan

    IPC分类号： H01F1/00 ,  C30B23/02 ,  C30B29/40

    CPC分类号： C30B23/02 ,  C30B29/40 ,  H01F1/401 ,  H01F1/404 ,  H01F1/405 ,  H01F41/14 ,  H01L43/10 ,  Y10S438/918

    摘要： A new semiconductor material or compound and method for its manufacture is disclosed. The material or compound has the Formula III-V or IV which includes as part of the compound, a transition element or a rare earth element present in an amount sufficient to change the material or compound from a paramagnetic state to a locally ordered magnetic state. The material or compound is made by depositing III, and V or IV and a transition element or a rare earth element onto a substrate at conditions such that the transition element or rare earth element that is deposited on the substrate is not in equilibrium with the material or compound. By employing this technique new semicon­ductor materials or compounds can be made including Ga 1-x Mn x As and In 1-x Mn x As where Mn is present in an amount greater than about 10²⁰ cm⁻³.

    摘要翻译： 公开了一种新的半导体材料或其制造方法。 该材料或化合物具有式III-V或IV，其包括作为化合物的一部分的过渡元素或稀土元素，其量足以将材料或化合物从顺磁性状态改变为局部有序的磁状态。 材料或化合物是通过将III和V或IV和过渡元素或稀土元素沉积在基底上而使沉积在基底上的过渡元素或稀土元素不与材料平衡的条件下制备的 或化合物。 通过采用这种技术，可以制备新的半导体材料或化合物，其包括Ga1-xMnxAs和In1-xMnxAs，其中Mn以大于约10 -2 cm -3的量存在。

    Optoelectronic devices
    4.
    发明公开
    Optoelectronic devices 失效
    光电器件

    公开(公告)号：EP0433542A3

    公开(公告)日：1991-12-27

    申请号：EP90114315.6

    申请日：1990-07-26

    申请人： International Business Machines Corporation

    发明人： Esaki, Leo ,  Ohno, Hideo ,  Mendez, Emilio Eugenio

    IPC分类号： H01L33/00 ,  H01L31/0352 ,  H01S3/19

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L31/0352 ,  H01S5/06203 ,  H01S5/06206 ,  H01S5/34 ,  H01S5/3402 ,  H01S5/3418 ,  H01S5/3419 ,  H01S5/3422 ,  H01S5/34306

    摘要： The present invention is directed to novel optoelectronic devices, such as light emitters and detectors, that have a unique combination of semiconductor materials that provides a band arrangement resulting in improved efficiency of carrier injection. The devices are quantum well type devices in which discrete electronic states are formed by size quantization effects in the quantum well region. Electromagnetic radiation of emission and absorption occurs by the transition of electrons from a first energy state to a second energy state in either the conduction band or the valence band of the quantum well layer (12). The bands edges of the layers are offset such that under an appropriate bias, the discrete energy states reside in the bandgap of one of the electrodes (14) and in an allowed region of the other electrode (16), with one state residing in the conduction band of one electrode and the other state residing in the valence band of the other electrode. The wavelength of the emitted or detected light is inversely proportional to the energy difference between the first and second states. Wavelength customization is facilitated by techniques for adjusting the energy difference.