专利检索 ap:("International Business Machines Corporation") AND inv:"BAO, Ruqiang" 第 1 页

1.

发明公开
REPLACEMENT METAL GATE PROCESSES FOR VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR 审中-公开

公开(公告)号：EP3711098A1

公开(公告)日：2020-09-23

申请号：EP18898726.7

申请日：2018-12-31

申请人： International Business Machines Corporation

发明人： LEE, Choonghyun , YEUNG, Chun Wing , BAO, Ruqiang , JAGANNATHAN, Hemanth

IPC分类号： H01L29/41

2.

发明公开
STACKED GATE STRUCTURES 审中-公开

公开(公告)号：EP4179571A1

公开(公告)日：2023-05-17

申请号：EP21737635.9

申请日：2021-06-29

申请人： International Business Machines Corporation

发明人： ZHANG, Chen , GUO, Dechao , WANG, Junli , XIE, Ruilong , CHENG, Kangguo , LI, Juntao , PARK, Chanro , BAO, Ruqiang , SUK, Sung Dae , YU, Lan , WU, Heng

IPC分类号： H01L27/12 , H01L21/84 , H01L29/66

3.

发明公开
MULTILAYER WORK FUNCTION METAL IN NANOSHEET STACKS USING A SACRIFICIAL OXIDE MATERIAL 审中-公开

公开(公告)号：EP4445422A1

公开(公告)日：2024-10-16

申请号：EP22817744.0

申请日：2022-11-16

申请人： International Business Machines Corporation

发明人： BAO, Ruqiang , WATANABE, Koji , SANKARAPANDIAN, Muthumanickam , ZHANG, Jingyun

IPC分类号： H01L29/06 , H01L29/423 , H01L29/49 , H01L21/336 , H01L29/775 , H01L21/8234 , H01L27/088 , H01L29/51