公开(公告)号：EP2396812A1

公开(公告)日：2011-12-21

申请号：EP10767544.9

申请日：2010-04-15

申请人： International Business Machines Corporation

发明人： CHANG, Josephine B. ,  CHANG, Leland ,  MO, Renee T. ,  NARAYANAN, Vijay ,  SLEIGHT, Jeffrey W.

IPC分类号： H01L21/335

CPC分类号： H01L29/7856 ,  H01L29/66795

摘要： Multiple threshold voltage (Vt) field-effect transistor (FET) devices and techniques for the fabrication thereof are provided. In one aspect, a FET device is provided including a source region; a drain region; at least one channel interconnecting the source and drain regions; and a gate, surrounding at least a portion of the channel, configured to have multiple threshold voltages due to the selective placement of at least one band edge metal throughout the gate.