-
公开(公告)号：EP0058337B1
公开(公告)日：1988-12-14
申请号：EP82100720.0
申请日：1982-02-02
IPC分类号： H01L29/167 , G01N27/04 , H01L21/322
CPC分类号： H01L29/167 , G01N27/041 , H01L21/3225 , Y10S117/916
-
公开(公告)号：EP0058337A3
公开(公告)日：1985-09-18
申请号：EP82100720
申请日：1982-02-02
IPC分类号： H01L29/167 , G01N27/04 , H01L21/322
CPC分类号： H01L29/167 , G01N27/041 , H01L21/3225 , Y10S117/916
摘要： A method or technique is disclosed for predicting where oxygen precipitation will occur in semiconductor wafers that are being processed in connection with integrated circuit manufacture; the technique is based upon the discovery that such precipitation will occur at resistivity peaks measured prior to any thermal treatment of the wafers. In other words, the technique permits characterizing the wafers by the diametral resistivity profile that is obtained in the initial resistivity measurements, whereby a change in oxygen precipitation can be predicted where compensated intrinsic regions have been measured in the initial measurements.
-
3.发明公开Process for predicting oxygen precipitation in semiconductor wafers 失效一种用于预测氧Prezipitation到半导体衬底的方法。
公开(公告)号：EP0058337A2
公开(公告)日：1982-08-25
申请号：EP82100720.0
申请日：1982-02-02
IPC分类号： H01L29/167 , G01N27/04 , H01L21/322
CPC分类号： H01L29/167 , G01N27/041 , H01L21/3225 , Y10S117/916
摘要： A method or technique is disclosed for predicting where oxygen precipitation will occur in semiconductor wafers that are being processed in connection with integrated circuit manufacture; the technique is based upon the discovery that such precipitation will occur at resistivity peaks measured prior to any thermal treatment of the wafers. In other words, the technique permits characterizing the wafers by the diametral resistivity profile that is obtained in the initial resistivity measurements, whereby a change in oxygen precipitation can be predicted where compensated intrinsic regions have been measured in the initial measurements.
-
-
搜索结果
3 条记录 (耗时 0.009 秒)
