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公开(公告)号：EP0001794B1
公开(公告)日：1980-12-10
申请号：EP78101194.5
申请日：1978-10-23
IPC分类号： H01L21/18
CPC分类号： H01L21/02008 , B24B7/228 , H01L21/3221 , Y10S148/017 , Y10S148/024 , Y10S148/051 , Y10S148/06 , Y10S148/061 , Y10S148/138 , Y10S438/974
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公开(公告)号：EP0058337B1
公开(公告)日：1988-12-14
申请号：EP82100720.0
申请日：1982-02-02
IPC分类号： H01L29/167 , G01N27/04 , H01L21/322
CPC分类号： H01L29/167 , G01N27/041 , H01L21/3225 , Y10S117/916
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公开(公告)号：EP0038931B1
公开(公告)日：1987-07-01
申请号：EP81102043.7
申请日：1981-03-19
CPC分类号： H01L23/5383 , H01L23/15 , H01L2224/16 , H01L2924/01014 , H01L2924/01019 , H01L2924/01046 , H01L2924/10253 , H01L2924/15312 , H05K1/0306 , H05K3/4629 , H01L2924/00
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4.发明授权
公开(公告)号：EP0014824B1
公开(公告)日：1983-04-06
申请号：EP80100090.2
申请日：1980-01-09
CPC分类号： H01L23/4926 , B28D1/005 , B28D5/0094 , H01L21/302 , H01L21/3043 , H01L21/67092 , H01L21/78 , H01L2924/0002 , H01L2924/09701 , Y10S148/028 , Y10T156/1059 , H01L2924/00
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公开(公告)号：EP0000489A1
公开(公告)日：1979-02-07
申请号：EP78100335.5
申请日：1978-07-10
发明人： Markovits, Gary
CPC分类号： H01L22/24 , G01N27/42 , G01R31/302 , H01L2924/0002 , H01L2924/00
摘要： Bei dem Verfahren zum zerstörungsfreien Prüfen von Halbleitersubstraten werden diese in eine verdünnte Elektrolytlösung (23) eingetaucht, dann werden die Substrate (21) eine festgelegte Zeit gegenüber der Elektrolytlösung (23) mit einer Spannung im Bereich zwischen etwa 50 und etwa 65 Volt negativ vorgespannt und gleichzeitig werden die Substratoberflächen mit einer Beleuchtungsstärke im Bereich zwischen etwa 538 und etwa 807 1x beleuchtet. Das sich an den Störstellenplätzen entwickelnde Wasserstoffbiäschenmuster kann fotografisch registriert werden.
Das Verfahren eignet sich besonders zum Auffinden und Registrieren von elektrisch aktiven Störstellenplätzen an Halbleiteroberflächen, von defekten P/N-Übergängen und von gestörten Bereichen in großflächigen P / N-Übergängen und ist deshalb als Prüfmethode sowohl in der Halbleiterplättchenfertigung als auch bei der Herstellung-von integrierten Schaltungen verwendbar.摘要翻译： 在用于半导体基板的非破坏性测试的方法，这些在稀释电解质溶液（23）浸入，然后在基板（21）与在范围内的电压约50至约65伏固定相对于所述电解质溶液（23）的时刻之间负偏压 用照度基板表面被在该区域大约538和大约807 1X同时之间照射。 不断发展的到Störstellenplätzen氢气泡图案可被照相记录。 该方法特别适用于检测和对半导体表面上登记有缺陷的P / N结的和在大的P / N转换不安区域的电活性Störstellenplätzen，并且因此是如测试方法都在半导体晶片的生产，以及在集成制造 电路使用。
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公开(公告)号：EP0038931A3
公开(公告)日：1984-07-25
申请号：EP81102043
申请日：1981-03-19
CPC分类号： H01L23/5383 , H01L23/15 , H01L2224/16 , H01L2924/01014 , H01L2924/01019 , H01L2924/01046 , H01L2924/10253 , H01L2924/15312 , H05K1/0306 , H05K3/4629 , H01L2924/00
摘要： A multi-layer substrate (30) comprises a matrix of sintered silicon particles (27) joined by a thin insulating layer (29) of a silicon compound, e.g. silicon dioxide or silicon nitride. Semiconductor circuit chips (14) are bonded to the surface of the substrate (30) to form an electrically connected, unitary integrated circuit module structure.
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公开(公告)号：EP0000489B1
公开(公告)日：1981-08-12
申请号：EP78100335.5
申请日：1978-07-10
发明人： Markovits, Gary
CPC分类号： H01L22/24 , G01N27/42 , G01R31/302 , H01L2924/0002 , H01L2924/00
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公开(公告)号：EP0058337A3
公开(公告)日：1985-09-18
申请号：EP82100720
申请日：1982-02-02
IPC分类号： H01L29/167 , G01N27/04 , H01L21/322
CPC分类号： H01L29/167 , G01N27/041 , H01L21/3225 , Y10S117/916
摘要： A method or technique is disclosed for predicting where oxygen precipitation will occur in semiconductor wafers that are being processed in connection with integrated circuit manufacture; the technique is based upon the discovery that such precipitation will occur at resistivity peaks measured prior to any thermal treatment of the wafers. In other words, the technique permits characterizing the wafers by the diametral resistivity profile that is obtained in the initial resistivity measurements, whereby a change in oxygen precipitation can be predicted where compensated intrinsic regions have been measured in the initial measurements.
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9.发明公开Process for predicting oxygen precipitation in semiconductor wafers 失效一种用于预测氧Prezipitation到半导体衬底的方法。
公开(公告)号：EP0058337A2
公开(公告)日：1982-08-25
申请号：EP82100720.0
申请日：1982-02-02
IPC分类号： H01L29/167 , G01N27/04 , H01L21/322
CPC分类号： H01L29/167 , G01N27/041 , H01L21/3225 , Y10S117/916
摘要： A method or technique is disclosed for predicting where oxygen precipitation will occur in semiconductor wafers that are being processed in connection with integrated circuit manufacture; the technique is based upon the discovery that such precipitation will occur at resistivity peaks measured prior to any thermal treatment of the wafers. In other words, the technique permits characterizing the wafers by the diametral resistivity profile that is obtained in the initial resistivity measurements, whereby a change in oxygen precipitation can be predicted where compensated intrinsic regions have been measured in the initial measurements.
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公开(公告)号：EP0038931A2
公开(公告)日：1981-11-04
申请号：EP81102043.7
申请日：1981-03-19
CPC分类号： H01L23/5383 , H01L23/15 , H01L2224/16 , H01L2924/01014 , H01L2924/01019 , H01L2924/01046 , H01L2924/10253 , H01L2924/15312 , H05K1/0306 , H05K3/4629 , H01L2924/00
摘要： A multi-layer substrate (30) comprises a matrix of sintered silicon particles (27) joined by a thin insulating layer (29) of a silicon compound, e.g. silicon dioxide or silicon nitride. Semiconductor circuit chips (14) are bonded to the surface of the substrate (30) to form an electrically connected, unitary integrated circuit module structure.
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