专利检索 ap:("International Business Machines Corporation") AND inv:"FRANK, Martin, Michael" 第 1 页

1.

发明公开
FIELD-EFFECT TRANSISTOR DEVICE HAVING A METAL GATE STACK WITH AN OXYGEN BARRIER LAYER 审中-公开
标题翻译：与氧气阻隔金属栅极堆栈的场效应晶体管器件

公开(公告)号：EP2519976A2

公开(公告)日：2012-11-07

申请号：EP11735025.6

申请日：2011-01-14

申请人： International Business Machines Corporation

发明人： ADUSUMILLI, Praneet , CALLEGARI, Alessandro , CHANG, Josephine, B. , CHOI, Changhwan , FRANK, Martin, Michael , GUILLOM, Michael , NARAYANAN, Vijay

IPC分类号： H01L29/78 , H01L21/28

CPC分类号： H01L29/4966 , H01L21/28088 , H01L29/513

摘要： A field effect transistor device and method which includes a semiconductor substrate, a dielectric gate layer, preferably a high dielectric constant gate layer, overlaying the semiconductor substrate and an electrically conductive oxygen barrier layer overlaying the gate dielectric layer. Sn one embodiment, there is a conductive layer between the gate dielectric layer and the oxygen barrier layer, In another embodiment, there is a low resistivity metal layer on the oxygen barrier layer.