公开(公告)号：EP1842240B1

公开(公告)日：2010-07-21

申请号：EP05826022.5

申请日：2005-12-02

申请人： International Business Machines Corporation

发明人： CALLEGARI, Alessandro C. ,  GRIBELYUK, Michael A. ,  LACEY, Dianne L. ,  MCFEELY, Fenton R. ,  SAENGER, Katherine L. ,  ZAFAR, Sufi

IPC分类号： H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  C23C14/06 ,  C23C14/34

CPC分类号： H01L29/4966 ,  C23C14/0036 ,  C23C14/0635 ,  H01L21/28088 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665

公开(公告)号：EP1842240A2

公开(公告)日：2007-10-10

申请号：EP05826022.5

申请日：2005-12-02

申请人： International Business Machines Corporation

发明人： CALLEGARI, Alessandro C. ,  GRIBELYUK, Michael A. ,  LACEY, Dianne L. ,  MCFEELY, Fenton R. ,  SAENGER, Katherine L. ,  ZAFAR, Sufi

IPC分类号： H01L29/94 ,  H01L29/76 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/4966 ,  C23C14/0036 ,  C23C14/0635 ,  H01L21/28088 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665

摘要： A compound metal comprising TiC which is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer is provided as well as a method of fabricating the TiC compound metal. Furthermore, the TiC metal compound of the present invention is a very efficient oxygen diffusion barrier at 1000°C allowing very aggressive equivalent oxide thickness (EOT) and inversion layer thickness scaling below 14 Å in a p-metal oxide semiconductor (pMOS) device.