专利检索 ap:("International Business Machines Corporation") AND inv:"VEREECKEN, Philippe, M." 第 1 页

1.

发明公开
GATE STACK ENGINEERING BY ELECTROCHEMICAL PROCESSING UTILIZING THROUGH-GATE-DIELECTRIC CURRENT FLOW 审中-公开
标题翻译：栅极堆叠技术，通过电化学处理与电流流过栅极电介质

公开(公告)号：EP1846947A1

公开(公告)日：2007-10-24

申请号：EP05852630.2

申请日：2005-12-02

申请人： International Business Machines Corporation

发明人： VEREECKEN, Philippe, M. , BASKER, Veeraraghavan , CABRAL, Cyril, Jr. , COOPER, Emanuel, I. , DELIGIANNI, Hariklia , FRANK, Martin, M. , JAMMY, Rajarao , PARUCHURI, Vamsi, Krishna , SAENGER, Katherine, L. , SHAO, Xiaoyan

IPC分类号： H01L21/302 , H01L29/745

CPC分类号： H01L21/2885 , C25D3/50 , C25D5/02 , C25D5/024 , C25D5/54 , C25D7/123 , C25D9/04 , C25F3/14 , H01L21/28079 , H01L21/28114 , H01L21/76885 , H01L29/513 , H01L29/517 , H01L29/78648

摘要： A method for electroplating a gate metal (9) or other conducting or semiconducting material on a gate dielectric (2) is provided. The method involves selecting a substrate (3, 4), dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be generated at an interface between the dielectric layer and the electrolyte solution or melt.